An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI.sub.2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [m.sup.2] or more and 3 [m.sup.2] or less.

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI.sub.2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [m.sup.2] or more and 3 [m.sup.2] or less.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

Methods for forming magnetic tunnel junctions and structures thereof include cryogenic etching the layers defining the magnetic tunnel junction without lateral diffusion of reactive species.

A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.

The present invention relates to a magnetic shielding block for a wireless power receiver, and a method of manufacturing same. A method of manufacturing a magnetic shielding block according to an embodiment of the present invention may comprise the steps of: disposing a non-conductive magnetic shielding sheet between a first and second cover tape and laminating same; marking a cutting region on one side of the laminated cover tape; and cutting the marked cutting region.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.