A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.

A magnetic material includes a structure in which a first magnetic layer 1 and a second magnetic layer 2 are stacked such that each layer is formed at least partially in a stacking direction by substantially one atomic layer. The first magnetic layer contains Co as a principal component. The second magnetic layer includes at least Ni. The magnetic material has magnetic anisotropy in the stacking direction. Preferably, an atomic arrangement within a film surface of the first magnetic layer and the second magnetic layer has six-fold symmetry.

An integrated magnetic inductor is provided with an inductor coil, magnetic film, and a substrate. The magnetic film can be placed between the neighboring inductor coils, and the thickness of the magnetic film is greater than the coil thickness. In addition, the magnetic film includes exchange-coupled magnetic materials. The exchange-coupled magnetic materials provide improved permeability and f.sub.FMR at the frequency of interest for the integrated magnetic inductor.

An integrated magnetic inductor is provided with an inductor coil, magnetic film, and a substrate. The magnetic film can be placed between the neighboring inductor coils, and the thickness of the magnetic film is greater than the coil thickness. In addition, the magnetic film includes exchange-coupled magnetic materials. The exchange-coupled magnetic materials provide improved permeability and f.sub.FMR at the frequency of interest for the integrated magnetic inductor.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.

A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of Co.sub.XFe.sub.YNi.sub.ZL.sub.WM.sub.V or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.

A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of Co.sub.XFe.sub.YNi.sub.ZL.sub.WM.sub.V or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB.sub.2O.sub.x (0<x4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB.sub.2O.sub.x (0<x4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.