Provided is a magnetoresistive element including: a storage layer of which a magnetization direction changes in accordance with information; a first magnetization fixed layer below the storage layer having a magnetization direction perpendicular to a film surface; a second magnetization fixed layer above the storage layer having a magnetization direction that is perpendicular to the film surface and that is opposite to the magnetization direction of the first magnetization fixed layer; a first intermediate layer between the first magnetization fixed layer and the storage layer; and a second intermediate layer between the second magnetization fixed layer and the storage layer. The storage layer includes a first magnetic material layer, a non-magnetic material layer, and a second magnetic material layer laminated in that order, and one of the first magnetic material layer and the second magnetic material layer has a magnetization direction parallel to the film surface.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a seed layer formed over a substrate, and a patterned insulating layer and a patterned protective layer formed over the seed layer providing a first exposed section of the seed layer. The micromagnetic device also includes a first electroplated layer segment electroplated over the first exposed section of the seed layer and laterally over sections of the patterned insulating layer and the patterned protective layer.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a seed layer formed over a substrate, and a patterned insulating layer and a patterned protective layer formed over the seed layer providing a first exposed section of the seed layer. The micromagnetic device also includes a first electroplated layer segment electroplated over the first exposed section of the seed layer and laterally over sections of the patterned insulating layer and the patterned protective layer.

Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a NdFeB base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an -Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a NdFeB base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an -Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm.sup.2 to about 900 mm.sup.2.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe.sub.3O.sub.4, K.sub.2O, Na.sub.2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.