A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction. The magnetic free layer structure includes one or more magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof.

The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction. The magnetic free layer structure includes one or more magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof.

A signal transferring device includes a first structure that includes a first magnetic thin film structure having a first magnetic vortex configured to receive a signal as an input signal, a second structure that is spaced apart from at least one side of the first structure, the second structure including a second magnetic thin film structure having a second magnetic vortex configured to transfer the signal, and a third structure that is spaced apart from at least one side of the second structure, the third structure including a third magnetic thin film structure having a third magnetic vortex configured to output the signal from the signal transferring device. The first and third structures have a symmetrical shape and the second structure has an asymmetrical shape.

A signal transferring device includes a first structure that includes a first magnetic thin film structure having a first magnetic vortex configured to receive a signal as an input signal, a second structure that is spaced apart from at least one side of the first structure, the second structure including a second magnetic thin film structure having a second magnetic vortex configured to transfer the signal, and a third structure that is spaced apart from at least one side of the second structure, the third structure including a third magnetic thin film structure having a third magnetic vortex configured to output the signal from the signal transferring device. The first and third structures have a symmetrical shape and the second structure has an asymmetrical shape.

Provided are a magneto-optical material capable of enhancing the tunable range of magneto-optical properties such as the Faraday rotation angle, and a method for producing the same. The temperature of a substrate 20 is controlled to a first temperature within the range of 300 to 800 [? C.], and the atmospheric pressure of the substrate 20 is controlled to 1.0?10.sup.?4 [Pa] or less (first step). Using a composite target or plurality of individual targets of a TCO material exhibiting ENZ properties in the infrared wavelength region, together with a magnetic metal, a magneto-optical material 10 is deposited on the substrate 20 while the temperature of the substrate 20 is controlled to a second temperature within the range of 300 to 800 [? C.], and the atmospheric pressure of the substrate 20 is controlled to the range of 0.1 to 10 [Pa] (second step).

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

The disclosure relates to a coil and an electrical system including the same. Specifically, according to an embodiment of the disclosure, there is provided a coil including: main coil surfaces which are opposite each other and are substantially planar; and a multilayer film which is wound to form a plurality of loops which are substantially concentric, wherein the plurality of loops include an innermost loop including a first longitudinal direction end of the coil, and an outermost loop including a second longitudinal direction end of the coil, wherein the multilayer film includes a plurality of first electro-conductive layers which alternate with each other, and one or more second electrical insulation layers, wherein the first electro-conductive layer and the second electrical insulation layer have a width and a length which are substantially coextensive therebetween, such that the main coil surfaces, which are substantially planar, include corresponding end surfaces of the first electro-conductive layer and the second electrical insulation layer, respectively, wherein at least two first electro-conductive layers have different average thicknesses to reduce an alternating current resistance of the coil by 5%-11.3% inclusive in a frequency of at least about 148 KHz.

A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a continuous or discontinuous metal (M) or MQ alloy layer within the FL reacts with scavenged oxygen to form a partially oxidized metal or alloy layer that enhances PMA and maintains acceptable RA. M is one of Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, or Hf, and Q is a transition metal, B, C, or Al. Methods are also provided for forming composite free layers where interfacial perpendicular anisotropy is generated therein by contact of the free layer with oxidized materials.