A method for forming a multilayer thin film exhibiting perpendicular magnetic anisotropy includes alternately sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber. The number of times the [CoFeSiB/Pd] multilayer thin film is stacked may be 3 or more.

A method for forming a CoFeSiBPd alloy thin film exhibiting perpendicular magnetic anisotropy includes: simultaneously sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a CoFeSiBPd alloy thin film on a substrate disposed inside the vacuum chamber; and annealing the substrate, on which the CoFeSiBPd alloy thin film is formed, to exhibit perpendicular magnetic anisotropy.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.

Disclosed herein is a composite magnetic sealing material includes a resin material and a filler blended in the resin material in a blend ratio of 50 vol. % or more and 85 vol. % or less. The filler includes a first magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni, the first magnetic filler having a first grain size distribution, and a second magnetic filler having a second grain size distribution different from the first grain size distribution.

Disclosed herein is a composite magnetic sealing material includes a resin material and a filler blended in the resin material in a blend ratio of 50 vol. % or more and 85 vol. % or less. The filler includes a first magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni, the first magnetic filler having a first grain size distribution, and a second magnetic filler having a second grain size distribution different from the first grain size distribution.

A magnetic tunneling junction (MTJ) with a reference layer is less temperature sensitive and is reflow compatible at 260? C. The reference layer may be a composite reference layer having n magnetic layers separated by (n?1) non-magnetic spacer layers. The reference layers may include low temperature coefficient reference layers or a combination of low temperature coefficient and high MR reference layers to produce a low temperature sensitive reference layer with good MR.

A magnetic tunneling junction (MTJ) with a reference layer is less temperature sensitive and is reflow compatible at 260? C. The reference layer may be a composite reference layer having n magnetic layers separated by (n?1) non-magnetic spacer layers. The reference layers may include low temperature coefficient reference layers or a combination of low temperature coefficient and high MR reference layers to produce a low temperature sensitive reference layer with good MR.

A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, metal clusters are formed in the FL and are subsequently partially or fully oxidized by scavenging oxygen to generate additional FL/oxide interfaces that enhance PMA, provide an acceptable resistance x area (RA) value, and preserve the magnetoresistive ratio. In other embodiments, a continuous or discontinuous metal (M) or MQ alloy layer within the FL reacts with scavenged oxygen to form a partially oxidized metal or alloy layer that enhances PMA and maintains acceptable RA. M is one of Mg, Al, B, Ca, Ba, Sr, Ta, Si, Mn, Ti, Zr, or Hf, and Q is a transition metal, B, C, or Al.

There is provided a fluorine-containing ether compound represented by following formula: R.sup.1R.sup.2CH.sub.2R.sup.3[CH.sub.2R.sup.4CH.sub.2R.sup.3].sub.nCH.sub.2R.sup.5R.sup.6 (n is 1 or 2; R.sup.3 and R.sup.3 are a perfluoropolyether chain; R.sup.4 is a divalent linking group having one polar group; R.sup.2 and R.sup.5 are a divalent linking group having one or more polar groups; R.sup.2 has an oxygen atom at an end that is bonded to R.sup.1; R.sup.5 has an oxygen atom at an end that is bonded to R.sup.6; R.sup.1 and R.sup.6 in end group bonded to an oxygen atom at an end of R.sup.2 or R.sup.5; and R.sup.1 and R.sup.6 are an organic group having 1 to 50 carbon atoms, and at least one of them is a group in which a carbonyl carbon atom or nitrogen atom constituting an amide bond is bonded to a carbon atom of an organic group having 1 to 8 carbon atoms).