This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X.sub.2YZ with respect to a stoichiometric composition.

The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

Systems, methods, and apparatus for generating an ideal diamagnetic response are disclosed. A disclosed diamagnetic system includes a metal foil or a first substrate having at least one surface that is coated by a metallic layer (e.g., permalloy). The diamagnetic system also includes a second substrate having at least one surface that is coated by graphene. The first and second substrates are immersed in an alkane (e.g., n-heptane). The diamagnetic system produces a diamagnetic response at room temperature in an applied magnetic field when the alkane is added to surround the permalloy and graphene.

The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl.sub.2O.sub.4 as a basic configuration.

The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl.sub.2O.sub.4 as a basic configuration.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

Provided are a magneto-optical material capable of enhancing the tunable range of magneto-optical properties such as the Faraday rotation angle, and a method for producing the same. The temperature of a substrate 20 is controlled to a first temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to 1.0×10.sup.−4 [Pa] or less (first step). Using a composite target or plurality of individual targets of a TCO material exhibiting ENZ properties in the infrared wavelength region, together with a magnetic metal, a magneto-optical material 10 is deposited on the substrate 20 while the temperature of the substrate 20 is controlled to a second temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to the range of 0.1 to 10 [Pa] (second step).

A nanogranular magnetic film comprises a structure including first phases comprised of nano-domains dispersed in a second phase. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A largest one of A(Fe1)/A(Fe2), A(Co1)/A(Co2), and A(Ni1)/A(Ni2) has a value of 1.20 or more and 8.00 or less, provided that a percentage of Fe in the first phases is A(Fe1), a percentage of Fe in the second phase is A(Fe2), a percentage of Co in the first phases is A(Co1), a percentage of Co in the second phase is A(Co2), a percentage of Ni in the first phases is A(Ni1), and a percentage of Ni in the second phase is A(Ni2). The first phases comprised of the nano-domains have an average size of 2 nm or more and 30 nm or less.

One example includes a superconducting circuit. The circuit includes superconducting circuitry fabricated in a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface. The circuit also includes a flux moat comprising a dielectric material formed in the circuit layer. The flux moat can be configured to trap a magnetic flux as the superconducting circuit is cooled to below a superconducting critical temperature. The circuit further includes a magnetic film arranged proximal to the flux moat on at least one of the first and second surfaces of the circuit layer. The magnetic film can be configured to guide the magnetic flux to the flux moat as the superconducting circuit is cooled to below the superconducting critical temperature.