A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

A FeNi ordered alloy structural body includes a support having a surface, and particles disposed on the surface of the support with gaps therebetween. Each of the particles contains an L1.sub.0-type FeNi ordered alloy phase. In a method for manufacturing the FeNi ordered alloy structural body, the support is prepared, and particles of an FeNi disordered alloy are dispersed on the surface of the support with gaps therebetween. A nitriding treatment is performed to the particles of the FeNi disordered alloy to form particles in which nitrogen is incorporated. After the nitriding treatment, a denitrification treatment is performed to desorb the nitrogen from the particles, thereby to form the particles containing the L1.sub.0-type FeNi ordered alloy phase.

The present disclosure relates to a method for locomotion of at least one nanorobot through a biochemical environment. The present disclosure also reveals a method for locomotion of nanorobots for use in drug delivery, delivery of materials for medical imaging and medical diagnosis.

The present disclosure relates to a method for locomotion of at least one nanorobot through a biochemical environment. The present disclosure also reveals a method for locomotion of nanorobots for use in drug delivery, delivery of materials for medical imaging and medical diagnosis.

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A.sub.1-xE.sub.x, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe.sub.3O.sub.4, K.sub.2O, Na.sub.2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.

Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe.sub.3O.sub.4, K.sub.2O, Na.sub.2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to form a magnetic tunnel junction structure on a substrate includes a pinned layer disposed on a substrate, wherein the pinned layer comprises multiple layers including at least one or more of a Co containing layer, Pt containing layer, Ta containing layer, an Ru containing layer, an optional structure decoupling layer disposed on the pinned magnetic layer, a magnetic reference layer disposed on the optional structure decoupling layer, a tunneling barrier layer disposed on the magnetic reference layer, a magnetic storage layer disposed on the tunneling barrier layer, and a capping layer disposed on the magnetic storage layer.