A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB.sub.2O.sub.x (0<x≤4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB.sub.2O.sub.x (0<x≤4), and has a spinel structure in which cations are arranged in a disordered manner, the tunnel barrier layer has a lattice-matched portion and a lattice-mismatched portion, A is a divalent cation of plural non-magnetic elements, B is an aluminum ion, and in the composition formula, the number of the divalent cation is smaller than half the number of the aluminum ion.

A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.

A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.

A noise suppression sheet includes a metal magnetic layer composed of a FeNi alloy containing 78 to 84 wt % of Ni, the metal magnetic layer having 2 to 8 wt % of Si added thereto. The noise suppression sheet achieves excellent magnetic shielding characteristics. In the noise suppression sheet, particularly, a high electrical resistivity of 70 to 115 μΩ.Math.cm is achieved in the metal magnetic layer, high magnetic permeability is maintained in a high frequency band of about 1 MHz to 10 MHz, and the frequency dependence of the dielectric constant is reduced.

According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250 C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T).

Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250 C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T).

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.