According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

A small appliance device, in particular a body-care appliance device, in particular a shaving apparatus device, beard-trimming device, hair-trimming device, epilating appliance device, tattooing appliance device, toothbrush device or the like, has a drive unit which comprises at least one drive element, wherein the drive element comprises at least one magnetically shape-shiftable material.

A small appliance device, in particular a body-care appliance device, in particular a shaving apparatus device, beard-trimming device, hair-trimming device, epilating appliance device, tattooing appliance device, toothbrush device or the like, has a drive unit which comprises at least one drive element, wherein the drive element comprises at least one magnetically shape-shiftable material.

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A magnetic device can include a substrate layer and an Fe.sub.1-xRh.sub.x film on the substrate layer, where x is in a range from about 0.47 to about 0.50, wherein a local region in the Fe.sub.1-xRh.sub.x film has a bistable magnetic order at a temperature between about 275K and about 325K. Films of Iron and Rhodium (FeRh) can provide both ferromagnetic (FM) and antiferromagnetic (AF) orders which are metastable at room temperature. For example, the composition of the Fe.sub.1-xRh.sub.x film can be controlled such that 0.47<x<0.50 so that after the magnetic order of the film (or a local region of the film) is established as AF or FM, the magnetic order can remain undisturbed while the temperature of the film varies within a range of room temperature.

A method for forming a multilayer thin film exhibiting perpendicular magnetic anisotropy includes alternately sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber. The number of times the [CoFeSiB/Pd] multilayer thin film is stacked may be 3 or more.

The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl.sub.2O.sub.4 as a basic configuration.