According to an embodiment of the invention, a magnetic element includes a first magnetic layer and a first nonmagnetic layer. An angle .sub.0 between a first direction and the magnetization direction of the first magnetic layer satisfies 0<.sub.0<90 or 90<.sub.0<180 in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer; and the first direction is from the first nonmagnetic layer toward the first magnetic layer. A resistance.Math.area of the first nonmagnetic layer is 10 .Math.m.sup.2 or more.

A thin film inductor includes a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film.

A thin film inductor includes a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film.

A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400 C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400 C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

A magnetoresistance effect element having a large MR ratio is provided.

This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

A magnetoresistance effect element having a large MR ratio is provided.

This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.