An in-plane magnetized film multilayer structure for use as a hard bias layer of a magnetoresistive effect element contains a plurality of in-plane magnetized films and a nonmagnetic intermediate layer. The nonmagnetic intermediate layer is disposed between the in-plane magnetized films, and the in-plane magnetized films adjacent across the nonmagnetic intermediate layer are coupled by a ferromagnetic coupling. Each of the in-plane magnetized films contains metal Co and metal Pt, and contains the metal Co in an amount of 45 at % or more and 80 at % or less and the metal Pt in an amount of 20 at % or more and 55 at % or less relative to a total of metal components of the each of the in-plane magnetized films. A total thickness of the plurality of in-plane magnetized films is 30 nm or more.

An in-plane magnetized film multilayer structure for use as a hard bias layer of a magnetoresistive effect element contains a plurality of in-plane magnetized films and a nonmagnetic intermediate layer. The nonmagnetic intermediate layer is disposed between the in-plane magnetized films, and the in-plane magnetized films adjacent across the nonmagnetic intermediate layer are coupled by a ferromagnetic coupling. Each of the in-plane magnetized films contains metal Co and metal Pt, and contains the metal Co in an amount of 45 at % or more and 80 at % or less and the metal Pt in an amount of 20 at % or more and 55 at % or less relative to a total of metal components of the each of the in-plane magnetized films. A total thickness of the plurality of in-plane magnetized films is 30 nm or more.

Embodiments of the present disclosure generally relate to a magnetic recording device comprising a magnetic recording head having a negative anisotropic magnetic (−Ku) material notch. The magnetic recording device comprises a main pole disposed at a media facing surface (MFS), a trailing shield disposed adjacent to the main pole, and a trailing gap disposed between the main pole and the trailing shield. The trailing shield comprises a hot seed layer disposed adjacent to the trailing gap, and a notch comprising a −Ku material in contact with the hot seed layer and the trailing gap. The notch is disposed adjacent to a first surface of the main pole at the MFS. The notch comprising the −Ku material results in an increased effective write magnetic field, an increased down-track field gradient due to reduced shunting from the main pole to the trailing shield, leading to an increased areal density capacity.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

Present disclosure relates to magnetic materials, chips having magnetic materials, and methods of forming magnetic materials. In certain embodiments, magnetic materials may include a seed layer, and a cobalt-based alloy formed on seed layer. The seed layer may include copper, cobalt, nickel, platinum, palladium, ruthenium, iron, nickel alloy, cobalt-iron-boron alloy, nickel-iron alloy, and any combination of these materials. In certain embodiments, the chip may include one or more on-chip magnetic structures. Each on-chip magnetic structure may include a seed layer, and a cobalt-based alloy formed on seed layer. In certain embodiments, method may include: placing a seed layer in an aqueous electroless plating bath to form a cobalt-based alloy on seed layer. In certain embodiments, the aqueous electroless plating bath may include sodium tetraborate, an alkali metal tartrate, ammonium sulfate, cobalt sulfate, ferric ammonium sulfate and sodium borohydride and has a pH between about 9 to about 13.

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a fixed layer that is magnetic and a tunnel barrier layer overlying the fixed layer, where the tunnel barrier layer is non-magnetic. A total free layer overlies the tunnel barrier layer, where the total free layer includes a plurality of individual free layers, wherein each of the plurality of individual free layers includes one or more of cobalt, iron, or boron, and where each of the plurality of individual free layers is magnetic. At least one of the plurality of individual free layers includes an atomic ratio of cobalt to iron that is from about 0.9/1 to about 1.1/1.

A permanent magnet includes a stack of N patterns stacked immediately one above the other in a stacking direction, each pattern including an antiferromagnetic layer made of antiferromagnetic material, a ferromagnetic layer made of ferromagnetic material, the directions of magnetization of the various ferromagnetic layers of all the patterns all being identical to one another. At least one ferromagnetic layer includes a first sub-layer made of CoFeB whose thickness is greater than 0.05 nm, and a second sub-layer made of a ferromagnetic material different from CoFeB and whose thickness is greater than the thickness of the first sub-layer.

A method of forming a semiconductor structure includes forming a seed layer over a top surface of a substrate and a protect layer over a top surface of the seed layer. The method also includes forming a magnetic film on a top surface of the protect layer and a top surface of the substrate in at least one opening formed in the seed layer and the protect layer. The method further includes forming at least one patterned magnetic feature on the top surface of the substrate by electro-etching the magnetic film, wherein the seed layer provides a self-stop for the electro-etching of the magnetic film.

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.