Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

A thin film inductor includes a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film.

A thin film inductor includes a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X.sub.2YZ with respect to a stoichiometric composition.

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

A magnetic element is formed from a magnetic material, which is a material that is capable of generating a magnetic skyrmion, and a defect is introduced at a position corresponding to each side of an approximate triangle in plan view. A magnetic field having such a direction and an intensity as to generate at least one magnetic skyrmion in an area corresponding to inside of the approximate triangle is applied to the magnetic material with the defects introduced therein. This causes the magnetic skyrmion to be generated in the area corresponding to inside of the approximate triangle. This configuration enables the generated magnetic skyrmion to be stably kept at a higher temperature.