A laminated structure includes a ferromagnetic layer, a multiferroic layer provided on one surface of the ferromagnetic layer, and a ferroelectric layer which is provided on the multiferroic layer opposite to the ferromagnetic layer and has a permittivity greater than that of the multiferroic layer.

Described is an apparatus which comprises: an input magnet formed of one or more materials with a sufficiently high anisotropy and sufficiently low magnetic saturation to increase injection of spin currents; and a first interface layer coupled to the input magnet, wherein the first interface layer is formed of non-magnetic material such that the first interface layer and the input magnet together have sufficiently matched atomistic crystalline layers.

An embodiment includes an apparatus comprising: a substrate; a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers; and a first synthetic anti-ferromagnetic (SAF) layer, a second SAF layer, and an intermediate layer, which includes a non-magnetic metal, between the first and second SAF layers; wherein the first SAF layer includes a Heusler alloy. Other embodiments are described herein.

A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co.sub.2Fe.sub.X.sub.(1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<1.9).

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A memory element includes a free magnetization layer (FR-ML) in a film form, a nonmagnetic layer (NML), and a fixed magnetization layer (FX-ML), The NML and FX-ML are stacked on the FR-ML. The FR ML stores a single bit of data 0 or 1 according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the FR-M. The reversal of the magnetization direction of the FR-ML is performed using the FX-ML by the spin-transfer torque technique. To read data, a reading current is caused to flow in one direction, and a Hall voltage generated in the FR-ML by the anomalous Hall effect is extracted from the FR-ML. The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the FR-ML.

A magnetoresistance effect element having a large MR ratio is provided.

This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa.sub.2O.sub.x (0<x4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.