Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB.sub.2O.sub.x, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa.sub.2O.sub.x (0<x4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni.sub.1Al.sub.2X.sub.3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<<0.5 in a case of =3/(1+2+3)].

A method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance is disclosed. A unique voltage-time profile is applied between a first and a second electrically conductive contact attached to the rare earth manganate, such that the rare earth manganate passes through an ordering temperature in a region of an electric field forming between the two electrically conductive contacts during a cooling process during and after application of the voltage pulse or the voltage ramp, and the vortex density is thus influenced and adjusted locally in the region of the electric field forming between the two electrically conductive contacts.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB.sub.2O.sub.x, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non-magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.