H01F10/20

MAGNETIC COMPOSITE
20240079172 · 2024-03-07 · ·

A magnetic composite includes a metal base material and a ferrite layer provided on a surface of the metal base material, the metal base material has a thickness of 0.001 ?m or more, and the ferrite layer has a thickness of 2.0 ?m or more, contains spinel-type ferrite as a principal component, and has a ratio of 0.00 or more and 0.03 or less, the ratio being of an integrated intensity of a (222) plane to an integrated intensity of a (311) plane in X-ray diffraction analysis.

MAGNETIC COMPOSITE
20240079172 · 2024-03-07 · ·

A magnetic composite includes a metal base material and a ferrite layer provided on a surface of the metal base material, the metal base material has a thickness of 0.001 ?m or more, and the ferrite layer has a thickness of 2.0 ?m or more, contains spinel-type ferrite as a principal component, and has a ratio of 0.00 or more and 0.03 or less, the ratio being of an integrated intensity of a (222) plane to an integrated intensity of a (311) plane in X-ray diffraction analysis.

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
20190333819 · 2019-10-31 · ·

A TMR element includes a reference layer, a magnetization free layer, a tunnel barrier layer between the reference layer and the magnetization free layer, and a perpendicular magnetization inducing layer and a leakage layer stacked on a side of the magnetization free layer opposite to the tunnel barrier layer side. A magnetization direction of the reference layer is fixed along a stack direction. The perpendicular magnetization inducing layer imparts magnetic anisotropy along the stack direction to the magnetization free layer. The leakage layer is disposed on an end portion region in an in-plane direction of the magnetization free layer. The perpendicular magnetization inducing layer is disposed on at least a central region in the in-plane direction of the magnetization free layer. A resistance value of the leakage layer along the stack direction per unit area in plane is less than that of the perpendicular magnetization inducing layer.

COATING TREATMENT SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING COATING MATERIAL
20190316260 · 2019-10-17 ·

A method produces a coating treatment solution to be used for forming a ferrite film having a spinel type crystal structure MFe.sub.2O.sub.4 on a surface of a soft magnetic material. The coating treatment solution contains a solution having a metal element and Fe. The metal element becomes divalent cations in the solution. The method prepares a first solution containing the metal element M and Fe, prepares a second solution by adding an alkaline solution to the first solution in a non-oxidizing atmosphere. The method produces the coating treatment solution by using the second solution.

Composite hexagonal ferrite materials

Disclosed herein are embodiments of composite hexagonal ferrite materials formed from a combination of Y phase and Z phase hexagonal ferrite materials. Advantageously, embodiments of the material can have a high resonant frequency as well as a high permeability. In some embodiments, the materials can be useful for magnetodielectric antennas.

MAGNON SPIN VALVE, MAGNON SENSOR, MAGNON FIELD EFFECT TRANSISTOR, MAGNON TUNNEL JUNCTION AND MAGNON MEMORY

The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, BUILT-IN MEMORY, AND METHOD OF MANUFACTURING TUNNEL MAGNETORESISTIVE EFFECT ELEMENT
20190180900 · 2019-06-13 · ·

A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the magnetization free layer, and a cap layer is stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side. The side wall portion includes a first region that includes the insulation material and covers a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit. The first region includes, as a contained chemical element, at least one of chemical elements (except oxygen) that constitute the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit.

POWDER FOR DUST CORES, METHOD FOR PRODUCING SAME, DUST CORE AND METHOD FOR PRODUCING DUST CORE
20190006069 · 2019-01-03 · ·

A powder for dust cores includes an aggregate of soft magnetic particles, each of which includes a soft magnetic metal particle, and a ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure. A diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern. By a method for producing a powder for dust cores, a raw material powder that includes an aggregate of soft magnetic metal particles is prepared. Furthermore, many ferrite fine particles are formed on a surface of each of the soft magnetic metal particles of the raw material powder. Additionally, the ferrite fine particles are coarsely crystallized through heat treatment to form a ferrite film, which includes ferrite crystal grains having a spinel structure, on the surface of the each of the soft magnetic metal particles.

METHOD OF MANUFACTURING MAGNETIC SHIELDING BLOCK FOR WIRELESS POWER CHARGING, AND MAGNETIC SHIELDING BLOCK AND WIRELESS POWER RECEIVING DEVICE USING SAME

The present invention relates to a magnetic shielding block for a wireless power receiver, and a method of manufacturing same. A method of manufacturing a magnetic shielding block according to an embodiment of the present invention may comprise the steps of: disposing a non-conductive magnetic shielding sheet between a first and second cover tape and laminating same; marking a cutting region on one side of the laminated cover tape; and cutting the marked cutting region.

Magnetic Shielding Unit For Magnetic Security Transmission, Module Comprising Same, And Portable Device Comprising Same

Disclosed is a magnetic field shielding unit for magnetic security transmission. The magnetic field shielding unit for magnetic security transmission includes a magnetic shielding layer formed of fragments of ferrite containing magnesium oxide (MgO) shredded to improve flexibility of the magnetic field shielding unit. The ferrite containing magnesium oxide has a real part () of the complex permeability of 650 or more at a frequency of 100 kHz. Accordingly, it is possible to prevent influence of a magnetic field on components of a mobile terminal device or a body of a user who uses the same, and to further increase the characteristics of the combined antennas even if the magnetic field shielding unit is combined with various kinds and purposes of antennas having various structures, shapes, sizes and intrinsic characteristics (inductance, resistivity, etc.).