A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A material stack includes a first magnetoresistance element with a first direction of response to an external magnetic field and a second magnetoresistance element with second direction of response to the external magnetic field, opposite to the first direction of response. The first magnetoresistance element can be disposed under or over the second magnetoresistance element. An insulating layer separates the first and second magnetoresistance elements.

A magnetoresistive memory device includes a magnetic tunnel junction comprising a free layer, a reference layer, and an insulating tunnel barrier layer located between the free layer and the reference layer, a perpendicular magnetic anisotropy (PMA) ferromagnetic layer that is vertically spaced from the free layer, an electrically conductive, non-magnetic interlayer exchange coupling layer located between the free layer and the PMA ferromagnetic layer. The magnetoresistive memory device is a hybrid magnetoresistive memory device which is programmed by a combination of a spin-torque transfer effect and a voltage-controlled exchange coupling effect.

Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.

A synthetic antiferromagnetic layer includes a first ferromagnetic layer containing an amorphizing element, the first ferromagnetic layer having a first structural symmetry; a second ferromagnetic layer having a second structural symmetry; wherein the first and the second ferromagnetic layers are antiferromagnetically coupled by a trifunctional non-magnetic multi-layered structure, the antiferromagnetic coupling being an Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, the non-magnetic multi-layered structure including at least two non-magnetic layers, the non-magnetic multilayered structure being at least partially nano-crystalline or amorphous in order to ensure a structural transition between the first ferromagnetic layer having the first structural symmetry and the second ferromagnetic layer having the second structural symmetry, the non-magnetic multilayered structure being adapted to absorb at least part of the amorphizing element out of the first ferromagnetic layer in contact with the non-magnetic multi-layered structure.

Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor , and a magnetic memory.

A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

A material stack includes a first magnetoresistance element with a first direction of response to an external magnetic field and a second magnetoresistance element with second direction of response to the external magnetic field, opposite to the first direction of response. The first magnetoresistance element can be disposed under or over the second magnetoresistance element. An insulating layer separates the first and second magnetoresistance elements.

A multilayer thin film for magnetic random access memory that includes thin platinum layers and thin cobalt-copper layers, and more particularly, to a multilayer thin film having magnetic layers including non-magnetic material copper that replaces a portion of the magnetic material cobalt.