A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Magnetoelectric or magnetoresistive memory cells include a magnesium containing nonmagnetic metal dust layer located between a free layer and a dielectric capping layer.

Magnetoelectric or magnetoresistive memory cells include a magnesium containing nonmagnetic metal dust layer located between a free layer and a dielectric capping layer.

Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.

A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance x area (RA.sub.1) product than RA.sub.2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RA.sub.CAP is formed on PL2 to provide higher PL2 stability. The condition RA.sub.1<RA.sub.2 and RA.sub.CAP<RA.sub.2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.

A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.

According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.