At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

Aspects of the present disclosure include magnetic sensor devices having a mixed oxide passivation layer. Magnetic sensor devices according to certain embodiments include a magnetic sensor element and a passivation layer having two or more of zirconium oxide, aluminum oxide and tantalum oxide. Also provided are magnetic sensor devices having an encapsulating passivation layer. Magnetic sensor devices according to certain embodiments include a substrate, a magnetic sensor element and a passivation layer that encapsulates the magnetic sensor element. Methods for making a magnetic sensor with a passivation layer are described. Methods and systems for detecting one or more analytes in a sample are also described. Aspects further include kits having one or more of the subject magnetic sensor devices and a magnetic label.

Systems and methods for reducing write error rate in MeRAM applications in accordance with various embodiments of the invention are illustrated. One embodiment includes a method for a writing mechanism for a magnetoelectric random access memory cell, the method including applying a voltage of a given polarity for a given period of time across a magnetoelectric junction bit of the magnetoelectric random access memory cell, wherein application of the voltage of the given polarity across the magnetoelectric junction bit reduces the perpendicular magnetic anisotropy and magnetic coercivity of the ferromagnetic free layer through a voltage controlled magnetic anisotropy effect, and lowering the applied voltage of the given polarity before the end of the given period of time, wherein the given period of time is approximately half of a precessional period of the ferromagnetic free layer.

A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

A system and a method for the deterministic generation of magnetic skyrmions includes a magnetic strip configured to store and transport skyrmions. The magnetic strip includes one or more spatial inhomogeneities configured to generate a skyrmion at known locations when excited by a current pulse. A current pulse generator is used to inject current pulses into the magnetic strip via contact pads electrically coupled to both the current pulse generator and the magnetic strip. The system also includes a magnetic field source to apply an out-of-plane magnetic field across the magnetic strip to facilitate generation of skyrmions. Skyrmions can be generated by applying an out-of-plane magnetic field to the magnetic strip and injecting a current pulse with sufficient current density towards the spatial inhomogeneities. Once a skyrmion is generated, another current pulse with sufficient current density can be injected to move the skyrmion.

A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.

A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.

A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe.sub.2TiSi.