According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from 1 kOe to +1 kOe.

According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

A spin current magnetized rotation element includes: a first ferromagnetic layer configured for a magnetization direction to be changed; and a spin-orbit torque wiring layer that extends in a second direction intersecting a first direction which is a direction orthogonal to a plane of the first ferromagnetic layer and is positioned in the first direction from the first ferromagnetic layer, wherein the spin-orbit torque wiring layer includes a superparamagnetic body therein, and the superparamagnetic body contains any one of a magnetic element selected from a group consisting of Fe, Co, Ni, and Gd.

According to one embodiment, a method includes forming a first insulative layer above a bottom surface of a groove and along inner sidewalls thereof, forming a source line layer within the groove of the substrate, forming a first dielectric layer on outer sides of a middle portion of the source line layer, forming a buffer layer on outer sides of the first dielectric layer, forming a gate terminal above the source line layer, forming a gate dielectric layer between the source line layer and the gate terminal and on outer sides of the lower portion of the gate terminal, forming a drain terminal including strained Si on outer sides of the first dielectric layer, and forming a relaxed buffer layer on outer sides of the upper portion of the source line layer and outer sides of the drain terminal, with the gate terminal extending beyond the relaxed buffer layer thickness.

The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.

A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the magnetization free layer, and a cap layer is stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side. The side wall portion includes a first region that includes the insulation material and covers a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit. The first region includes, as a contained chemical element, at least one of chemical elements (except oxygen) that constitute the at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit.

At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400 C. or more.

A superparamagnetic tunnel junction element and a computing system using same, wherein the tunnel junction element has excellent operational stability against an external magnetic field and is suitable for the computing system based on probabilistic computing. The superparamagnetic tunnel junction element includes a first ferromagnetic layer group containing a ferromagnetic material, a second ferromagnetic layer group containing a ferromagnetic material, and a barrier layer disposed between the first ferromagnetic layer group and the second ferromagnetic layer group, wherein the first ferromagnetic layer group 14 includes a (1-1)th ferromagnetic layer, a (1-2)th ferromagnetic layer, and a first nonmagnetic coupling layer, the (1-1)th ferromagnetic layer is made of a ferromagnetic material, the magnetization direction thereof changes with a first time constant, the first time constant is one second or shorter, and the first nonmagnetic coupling layer contains at least one of Ru, Ir, Rh, Cr, and Cu.