Apparatus and associated methods relate to a magnetoresistive sensor element with synthetic antiferromagnetic biasing structure separated, by a non-magnetic tuning spacer, from a free ferromagnetic layer of a TMR/GMR sensor. The synthetic antiferromagnetic biasing structure includes first and second ferromagnetic layers separated from one another by a synthetic antiferromagnetic spacer. The synthetic antiferromagnetic biasing structure is biased during manufacture and pinned via exchange coupling with an adjacent antiferromagnetic layer. The synthetic antiferromagnetic biasing structure biases the free ferromagnetic layer via tuned exchanged coupling via relative proximity controlled by thickness of the non-magnetic tuning spacer.

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

A magnetic sensor includes a magnetoresistive effect element having a sensitivity axis in a specific direction. The magnetoresistive effect element has on a substrate, a laminate structure in which a fixed magnetic layer and a free magnetic layer are laminated with a nonmagnetic material layer interposed therebetween and includes at a side of the free magnetic layer apart from the nonmagnetic material layer, a first antiferromagnetic layer which generates an exchange coupling bias with the free magnetic layer and aligns a magnetization direction thereof in a predetermined direction in a magnetization changeable state. The free magnetic layer includes a first ferromagnetic layer in contact with the first antiferromagnetic layer to be exchange-coupled therewith and a magnetic adjustment layer at a side of the first ferromagnetic layer apart from the first antiferromagnetic layer. The magnetic adjustment layer contains at least one iron group element and at least one platinum group element.

A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.

A voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device includes a bottom electrode, a bottom CoFeB fixed layer disposed above and in electrical communication with the bottom electrode, a MgO layer disposed above the bottom CoFeB fixed layer, a top CoFeB free layer disposed above the MgO layer, a Mo capping layer disposed above the top CoFeB free layer, and a top electrode disposed above and in electrical communication with the Mo capping layer. A magnetization state of the top CoFeB free layer is switchable between an original state and an opposite state by applying a switching voltage across the MTJ device for a switching duration corresponding to a half period of a magnetic moment precession of the top CoFeB free layer.

A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

An in-plane magnetized film multilayer structure for use as a hard bias layer of a magnetoresistive effect element contains a plurality of in-plane magnetized films and a nonmagnetic intermediate layer. The nonmagnetic intermediate layer is disposed between the in-plane magnetized films, and the in-plane magnetized films adjacent across the nonmagnetic intermediate layer are coupled by a ferromagnetic coupling. Each of the in-plane magnetized films contains metal Co and metal Pt, and contains the metal Co in an amount of 45 at % or more and 80 at % or less and the metal Pt in an amount of 20 at % or more and 55 at % or less relative to a total of metal components of the each of the in-plane magnetized films. A total thickness of the plurality of in-plane magnetized films is 30 nm or more.

A method for manufacturing a magnetic random access memory element having increased retention and low resistance area product (RA). A MgO layer is deposited to contact a magnetic free layer of the memory element. The MgO layer is deposited in a sputter deposition chamber using a DC power and a Mg target to deposit Mg. The deposition of Mg is periodically stopped and oxygen introduced into the deposition chamber. This process is repeated a desired number of times, resulting in a multi-layer structure. The resulting MgO layer provides excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.