A magnetoresistive memory device includes a first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes, from one side to another: a reference layer having a fixed reference magnetization direction, a first spinel layer located including a first polycrystalline spinel material having (001) texture along an axial direction that is perpendicular to an interface with the reference layer, a magnesium oxide layer including a polycrystalline magnesium oxide material having (001) texture along the axial direction, a second spinel layer including a second polycrystalline spinel material having (001) texture along the axial direction, and a ferromagnetic free layer.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.

A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.

A semiconductor device includes a synthetic antiferromagnetic (SAF) layer on a substrate, a barrier layer on the SAF layer, and a free layer on the barrier layer. Preferably, the SAF layer further includes a first pinned layer, a first spacer on the first pinned layer, a second pinned layer on the first spacer, a second spacer on the second pinned layer, and a reference layer on the second spacer.

This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

A domain wall moving type magnetic recording element includes: a domain wall moving layer in which first layers containing a rare earth metal and second layers containing a transition metal are alternately stacked in a first direction; and a first electrode and a second electrode which face the domain wall moving layer and are arranged to be away from each other. The domain wall moving layer has SOT suppression parts which are positioned in one of interfaces between the first layers and the second layers and contain a non-magnetic metal. The SOT suppression parts are locally distributed at the interface.

A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.