A miniaturized 3D spiral inductor is disclosed. The 3D spiral inductor, comprising: a plurality of top metal wires configured in parallel on a top surface of a dielectric layer; a plurality of metal vias formed in a matrix of 2×N, and coelevationally embedded in the dielectric layer; each top metal wire electrically coupled top ends of a left metal via and a right metal via; and a plurality of bottom metal wires configured on a bottom ends of the plurality of metal vias; each bottom metal wire electrically coupled bottom ends of a left metal via and a right metal via; the plurality of metal elements connected sequentially to form a 3D spiral inductor.

A coil component that can be made thinner while ensuring sufficient magnetic characteristics includes a magnetic part, a conductor part, and multiple insulator parts. The magnetic part is constituted by magnetic alloy grains. The conductor part has multiple winding parts and is wound around one axis inside the magnetic part. The multiple insulator parts are each placed between the multiple winding parts, each having a winding shape that includes two joining surfaces that are respectively joined to two winding parts facing each other at least partially in the direction of the one axis, and are each constituted by electrically insulating grains.

A method of manufacturing an electronic component capable of preventing entrance of a plating solution and a flux component at an interface to which an inner electrode of a ceramic element body is extended, and capable of forming an outer electrode of an arbitrary shape. A ceramic element body is made of a ceramic material containing a metal oxide, and part of an inner electrode is extended to extended surfaces of the ceramic element body. A base electrode is formed on each of the extended surfaces using a conductive paste to be connected to the inner electrode. Part of another surface of the ceramic element body adjacent to the extended surfaces is locally heated, and part of the metal oxide is reduced to form a reformed portion. A plating electrode is continuously formed over the base electrode and the reformed portion through a plating method to form outer electrodes.

A semiconductor package comprises a semiconductor die and a wiring structure, which is electrically connected to the semiconductor die. Further, the semiconductor package comprises a magnetic material. The magnetic material embeds and/or encircles a portion of the wiring structure.

A micromagnetic device includes a first insulating layer formed above a substrate, a first seed layer formed above the first insulating layer, a first conductive winding layer selectively formed above the first seed layer, and a second insulating layer formed above the first conductive winding layer. The micromagnetic device also includes a first magnetic core layer formed above the second insulating layer, a third insulating layer formed above the first magnetic core layer, and a second magnetic core layer formed above the third insulating layer. The micromagnetic device still further includes a fourth insulating layer formed above the second magnetic core layer, a second seed layer formed above the fourth insulating layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.

An inductor component includes an element body, a coil in the element body, and a non-magnetic insulation layer covering at least part of the coil. The element body includes first and second magnetic layers laminated in order in a first direction. The coil includes a small-turn inductor wiring of 0.5 or less turns extending along a plane orthogonal to the first direction between the first and second magnetic layers. In a first cross-section orthogonal to an extending direction of the small-turn inductor wiring, the small-turn inductor wiring has a top surface facing in the first direction, a bottom surface facing in a second direction opposite from the first direction, a first side surface facing in a third direction orthogonal to the first direction, and a second side surface facing in a fourth direction opposite from the third direction.

Provided is a method for manufacturing a high-density integrally-molded induct comprising the following steps: (1) winding an enameled wire coil to be spiral; (2) mechanically pressing first ferromagnetic powder into a magnetic core; (3) mounting the magnetic core into a. hollow cavity of the enameled wire coil; (4) mounting the enameled wire coil provided with the magnetic core into an injection mold; (5) uniformly mixing and stirring resin glue, a coupling agent and an accelerant, to obtain high-temperature resin glue; (6) uniformly stirring second ferromagnetic powder and the high-temperature resin glue, to obtain a magnetic composite material; (7) injecting the magnetic composite material into a mold cavity of the injection mold for molding, and solidifying the magnetic composite material to obtain an outer magnet; and (8) cooling and de-molding the outer magnet, to obtain a molded inductor. The inductor obtained using the above method is small in size, high in density, high in relative permeability, better in heat dissipation, and lone in service life. The inductor is simply manufactured using an integral molding method, thus reducing the production cost.

An inductor component comprising a spiral wiring wound on a plane; a first magnetic layer and a second magnetic layer located at positions sandwiching the spiral wiring from both sides in a normal direction relative to the plane on which the spiral wiring is wound; a vertical wiring extending from the spiral wiring in the normal direction to pass through the first magnetic layer; and an external terminal disposed on a surface of the first magnetic layer to connect an end surface of the vertical wiring. The first magnetic layer has magnetic permeability lower than that of the second magnetic layer.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

A coil component including an element assembly that includes a magnetic portion and a coil-like conductor portion embedded in the magnetic portion and outer electrodes disposed on an outer surface of the element assembly, wherein the outer surface has a mounting surface parallel to the central axis of a coil, the magnetic portion includes a first portion, a second portion, and a third portion, the first portion and the third portion contain glass and ferrite and have ferrite contents of 40 percent by volume or more, the second portion contains glass and ferrite and has a ferrite content smaller than the ferrite contents in the first portion and the third portion, and each of the first portion and the third portion has a covered region that is covered with the outer electrode and an exposed region that is not covered with the outer electrode on the mounting surface.