Provided is an electron beam source for generating an electron beam comprising a cathode, an anode and a grid for regulating an electron beam current. The cathode has a base and a protrusion with sidewalls and a top surface. The base surface and the top surface are essentially flat. The base surface and the top surface are arranged at a predetermined distance from each other. The base is larger than the protrusion. The electron beam source further comprising a control unit adapted for changing an applied voltage to the grid for switching a spot size of the electron beam on a target surface between at least a first a first spot size corresponding to emission from the top surface of the cathode only and to a second spot size corresponding to emission from the top surface and the base surface of the cathode.

A monolithic graphite heater for heating a thermionic electron cathode includes first and second electrically conductive arms, each one of the first and second electrically conductive arms having an electrode mount at a proximal end, a thermal apex at a distal end, and a transitional region between the electrode mount and the thermal apex; a cathode mount electrically and mechanically coupling each thermal apex to form a maximum Joule-heating region at or adjacent the cathode mount and decreasing Joule-heating along each transitional region; and a press-fit aperture formed in the cathode mount, the press-fit aperture sized to receive at least a portion of the thermionic electron cathode for facilitating thermionic emission produced therefrom in response to operative heat power generation provided by the maximum Joule-heating region.

A monolithic graphite heater for heating a thermionic electron cathode includes first and second electrically conductive arms, each one of the first and second electrically conductive arms having an electrode mount at a proximal end, a thermal apex at a distal end, and a transitional region between the electrode mount and the thermal apex; a cathode mount electrically and mechanically coupling each thermal apex to form a maximum Joule-heating region at or adjacent the cathode mount and decreasing Joule-heating along each transitional region; and a press-fit aperture formed in the cathode mount, the press-fit aperture sized to receive at least a portion of the thermionic electron cathode for facilitating thermionic emission produced therefrom in response to operative heat power generation provided by the maximum Joule-heating region.

A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 ?m.

A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 ?m.

In the present invention, a flat emitter is formed by the formation of emitter material wires into a unitary non-porous flat emitter structure. The wires are formed with increased yield and tensile strength as a result of the manner of the formation of the emitter material or metal into the wires that is transferred to the flat emitter. To form the flat emitter, the wires are encapsulated and subjected to sufficient temperatures and pressure in a hot isostatic pressing treatment/process to increase the density of the wires into a solid sheet without the presence of voids or pores in the sheet. In forming the emitter sheet in this manner, the strength properties from the wires are retained within the sheet to provide the emitter with increased creep resistance and a consequently longer useful life in the x-ray tube.

The present disclosure can relate to a thermionic emission device. The thermionic emission device can include a substrate layer, an insulating layer deposited onto an uppermost surface of the substrate layer, and an electron emitting layer deposited onto an uppermost surface of the insulating layer. The electron emitting layer, the insulating layer, and the substrate layer each can include a first etching and a second etching oriented according to a photoresist pattern applied to an uppermost surface of the electron emitting layer. The first etching and the second etching can converge to form a cavity in the substrate layer beneath a beam suspended above the cavity. The beam can comprise an unetched region of the electron emitting layer and the insulating layer oriented between the first etching and the second etching.

The present disclosure can relate to a thermionic emission device. The thermionic emission device can include a substrate layer, an insulating layer deposited onto an uppermost surface of the substrate layer, and an electron emitting layer deposited onto an uppermost surface of the insulating layer. The electron emitting layer, the insulating layer, and the substrate layer each can include a first etching and a second etching oriented according to a photoresist pattern applied to an uppermost surface of the electron emitting layer. The first etching and the second etching can converge to form a cavity in the substrate layer beneath a beam suspended above the cavity. The beam can comprise an unetched region of the electron emitting layer and the insulating layer oriented between the first etching and the second etching.

A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 ?m or more and 2.0 ?m or less.

A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 ?m or more and 2.0 ?m or less.