H01J37/07

MAGNET ARRAY FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

Provided herein is an apparatus comprising a deposition chamber with a cathode, and a means for creating an asymmetric field about the cathode.

MAGNET ARRAY FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

Provided herein is an apparatus comprising a deposition chamber with a cathode, and a means for creating an asymmetric field about the cathode.

Charged particle beam apparatus

Provided is a charged particle beam apparatus capable of realizing a highly reliable insulating structure. This charged particle beam apparatus emits a charged particle beam from a charged particle beam emission device onto a sample, detects charged particles generated from the sample, and creates a sample image or processes the sample. The charged particle beam emission device is provided with a charged particle source and a shield arranged in an interior of a metal housing that is filled with an insulating gas, and an acceleration electrode arranged below the charged particle source, power being supplied to the acceleration electrode via the shield.

Charged particle beam apparatus

Provided is a charged particle beam apparatus capable of realizing a highly reliable insulating structure. This charged particle beam apparatus emits a charged particle beam from a charged particle beam emission device onto a sample, detects charged particles generated from the sample, and creates a sample image or processes the sample. The charged particle beam emission device is provided with a charged particle source and a shield arranged in an interior of a metal housing that is filled with an insulating gas, and an acceleration electrode arranged below the charged particle source, power being supplied to the acceleration electrode via the shield.

ELECTRON GUN AND ELECTRON BEAM WRITING APPARATUS
20250273423 · 2025-08-28 · ·

An electron gun includes a cathode to emit electron beams, an anode configured to include a surface which faces the cathode and in which there are formed the first opening for passing the electron beams from the cathode and at least one second opening at a position different from that of the first opening and in the same surface as the first opening, and maintained to be a relatively positive potential with respect to a cathode potential, a limiting aperture substrate at the downstream side of the anode with respect to an advancing direction of the electron beams, formed with the third opening for passing the electron beams and limiting passage of a portion of the electron beams, and a Wehnelt electrode between the cathode and the anode, applied with a relatively negative potential with respect to an anode potential.

ELECTRON GUN AND ELECTRON BEAM WRITING APPARATUS
20250273423 · 2025-08-28 · ·

An electron gun includes a cathode to emit electron beams, an anode configured to include a surface which faces the cathode and in which there are formed the first opening for passing the electron beams from the cathode and at least one second opening at a position different from that of the first opening and in the same surface as the first opening, and maintained to be a relatively positive potential with respect to a cathode potential, a limiting aperture substrate at the downstream side of the anode with respect to an advancing direction of the electron beams, formed with the third opening for passing the electron beams and limiting passage of a portion of the electron beams, and a Wehnelt electrode between the cathode and the anode, applied with a relatively negative potential with respect to an anode potential.

ULTRA-HIGH SENSITIVITY HYBRID INSPECTION WITH FULL WAFER COVERAGE CAPABILITY

A device includes a two dimensional array of probes for inspecting a wafer. The two dimensional array includes at least one electron beam column or a magnetic element located in each dimension of the two dimensional array. Each electron beam column includes: an electron source, and a detector in line with the electron source. The two dimensional array is arranged such that each electron beam column is located adjacent to a magnetic element to minimize optical variation resulting from one or more magnetic fields.

ULTRA-HIGH SENSITIVITY HYBRID INSPECTION WITH FULL WAFER COVERAGE CAPABILITY

A device includes a two dimensional array of probes for inspecting a wafer. The two dimensional array includes at least one electron beam column or a magnetic element located in each dimension of the two dimensional array. Each electron beam column includes: an electron source, and a detector in line with the electron source. The two dimensional array is arranged such that each electron beam column is located adjacent to a magnetic element to minimize optical variation resulting from one or more magnetic fields.

Electron source with magnetic suppressor electrode

An electron source is disclosed. The electron source may include an electron emitter configured to generate one or more electron beams. The electron source may further include a magnetic suppressor electrode surrounding at least a portion of the electron emitter. The magnetic suppressor electrode may be formed from one or more magnetic materials. The magnetic suppressor may be configured to shield at least a portion of the electron emitter from an axial magnetic field. The electron source may further include an extractor electrode positioned adjacent to a tip of the electron emitter.

Charged particle beam device

Provided is a charged particle beam device that can precisely manage a temperature at which a cold field emitter is heated. A charged particle beam device includes: a cold field emitter including a tip having a sharpened distal end, a filament connected to the tip, and an auxiliary electrode covering the filament and having an opening from which the tip protrudes; an extraction electrode to which an extraction voltage for extracting electrons from the cold field emitter is applied; and an acceleration electrode to which an acceleration voltage for accelerating the electrons extracted from the cold field emitter is applied. When the tip and the filament are heated, thermionic electrons emitted from the tip and the filament are collected by the auxiliary electrode to measure a current by applying a positive voltage with respect to the tip to the auxiliary electrode.