Patent classifications
H01J37/073
Individually switched field emission arrays
An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.
Apparatus for electrodeless measurement of electron mobility in nano material, apparatus for electrodeless measurement of hole mobility in nano material, method for electrodeless measurement of electron mobility in nano material, and method for electrodeless measurement of hole mobility in nano material
A method for measuring electron mobility according to the present invention, which is performed by an apparatus comprising a chamber forming a sealed space, an electron gun provided in the chamber, and a metal sample disposed opposite to the electron gun in the sealed space, comprises: an electron irradiation step of irradiating the metal sample with electrons by the electron gun; a sample current measurement step of applying a voltage to the metal sample to measure a sample current obtained in the metal sample according to the applied voltage; a secondary electron current calculation step of calculating a secondary electron current through the measured sample current; and an effective incident current definition step of defining the sum of the measured sample current and the calculated secondary electron current as an effective incident current.
Apparatus for electrodeless measurement of electron mobility in nano material, apparatus for electrodeless measurement of hole mobility in nano material, method for electrodeless measurement of electron mobility in nano material, and method for electrodeless measurement of hole mobility in nano material
A method for measuring electron mobility according to the present invention, which is performed by an apparatus comprising a chamber forming a sealed space, an electron gun provided in the chamber, and a metal sample disposed opposite to the electron gun in the sealed space, comprises: an electron irradiation step of irradiating the metal sample with electrons by the electron gun; a sample current measurement step of applying a voltage to the metal sample to measure a sample current obtained in the metal sample according to the applied voltage; a secondary electron current calculation step of calculating a secondary electron current through the measured sample current; and an effective incident current definition step of defining the sum of the measured sample current and the calculated secondary electron current as an effective incident current.
THERMOELECTRIC FIELD EMISSION ELECTRON SOURCE AND ELECTRON BEAM APPLICATION DEVICE
To stabilize an amount of electron beam emitted from a thermoelectric field emission electron source. A thermoelectric field emission electron source includes: an electron source 301 having a needle shape; a metal wire 302 to which the electron source is fixed and configured to heat the electron source; a stem 303 fixed to an insulator and configured to energize the metal wire; a first electrode 304 having a first opening portion 304a and arranged such that a tip of the electron source protrudes from the first opening portion; a second electrode 306 having a second opening portion 306a; and an insulating body 307 configured to position the first electrode and the second electrode such that a central axis of the first opening portion and a central axis of the second opening portion coincide with each other, and provide electrical insulation between the first electrode and the second electrode, so as to provide a structure in which an amount of gas released when the first electrode is heated is reduced.
THERMOELECTRIC FIELD EMISSION ELECTRON SOURCE AND ELECTRON BEAM APPLICATION DEVICE
To stabilize an amount of electron beam emitted from a thermoelectric field emission electron source. A thermoelectric field emission electron source includes: an electron source 301 having a needle shape; a metal wire 302 to which the electron source is fixed and configured to heat the electron source; a stem 303 fixed to an insulator and configured to energize the metal wire; a first electrode 304 having a first opening portion 304a and arranged such that a tip of the electron source protrudes from the first opening portion; a second electrode 306 having a second opening portion 306a; and an insulating body 307 configured to position the first electrode and the second electrode such that a central axis of the first opening portion and a central axis of the second opening portion coincide with each other, and provide electrical insulation between the first electrode and the second electrode, so as to provide a structure in which an amount of gas released when the first electrode is heated is reduced.
Array of carbon nanotube micro-tip structures
An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.
Array of carbon nanotube micro-tip structures
An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.
Electron source operating method
The present disclosure provides an electron source operating method, the electron source including at least one emission site fixed on a tip, the emission site being a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field, and the operating method comprises emitting electrons by controlling operating parameters of the electron source.
Electron source operating method
The present disclosure provides an electron source operating method, the electron source including at least one emission site fixed on a tip, the emission site being a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field, and the operating method comprises emitting electrons by controlling operating parameters of the electron source.
Methods of optical device fabrication using an electron beam apparatus
Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.