A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration corrector 106 disposed perpendicular to an optical axis 109, a plurality of magnetic field sectors 104 by which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector 106, and the orbit of the electrons emitted from the mirror aberration corrector 106 is returned to the optical axis, and a doublet lens 105 disposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration corrector 106 disposed perpendicular to an optical axis 109, a plurality of magnetic field sectors 104 by which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector 106, and the orbit of the electrons emitted from the mirror aberration corrector 106 is returned to the optical axis, and a doublet lens 105 disposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.