Embodiments of the present invention disclose methods and systems for producing an adaptive pencil beam having an adjustable lateral beam size and Bragg-peak width. According to one disclosed embodiment, an apparatus for producing an adaptive pencil beam is disclosed. The apparatus includes a set of momentum band expanders configured to widen a momentum spread of a pencil beam, where a momentum band expander is selected from the set of momentum band expanders to receive the pencil beam, and a slit at dispersive focus of two dipole magnets to adjust a width of a Bragg-peak of the pencil beam. According to another disclosed embodiment, a method for producing an adaptive pencil beam with an adjustable lateral beam is disclosed. The method includes selecting a scatter foil, or setting of a defocusing/focusing magnet, and adjusting a lateral size of the pencil beam.

Embodiments of the present invention disclose methods and systems for producing an adaptive pencil beam having an adjustable lateral beam size and Bragg-peak width. According to one disclosed embodiment, an apparatus for producing an adaptive pencil beam is disclosed. The apparatus includes a set of momentum band expanders configured to widen a momentum spread of a pencil beam, where a momentum band expander is selected from the set of momentum band expanders to receive the pencil beam, and a slit at dispersive focus of two dipole magnets to adjust a width of a Bragg-peak of the pencil beam. According to another disclosed embodiment, a method for producing an adaptive pencil beam with an adjustable lateral beam is disclosed. The method includes selecting a scatter foil, or setting of a defocusing/focusing magnet, and adjusting a lateral size of the pencil beam.

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

An adjustable magnetic field free objective lens for a charged particle microscope is disclosed herein. An example charged particle microscope at least includes first and second optical elements arranged on opposing sides of a sample plane, a third optical element arranged around the sample plane, and a controller coupled to control the first, second and third optical elements. The controller coupled to excite the first and second optical elements to generate first and second magnetic lenses, the first and second magnetic lenses formed on opposing sides of the sample plane and oriented in the same direction, and excite the third optical element to generate a third magnetic lens at the sample plane that is oriented in an opposite direction, where a ratio of the excitation of the third optical element to the excitation of the first and second optical elements adjusts a magnetic field at the sample plane.

An adjustable magnetic field free objective lens for a charged particle microscope is disclosed herein. An example charged particle microscope at least includes first and second optical elements arranged on opposing sides of a sample plane, a third optical element arranged around the sample plane, and a controller coupled to control the first, second and third optical elements. The controller coupled to excite the first and second optical elements to generate first and second magnetic lenses, the first and second magnetic lenses formed on opposing sides of the sample plane and oriented in the same direction, and excite the third optical element to generate a third magnetic lens at the sample plane that is oriented in an opposite direction, where a ratio of the excitation of the third optical element to the excitation of the first and second optical elements adjusts a magnetic field at the sample plane.