A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam; a retarding field device for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode; and a first detector for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis to the sample for releasing signal particles. The proxy electrode includes one opening allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0° to 20° or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

Correctors for correcting two-fold, fifth-order parasitic aberrations in charged particle systems according to the present disclosure include a first corrective component that generates a first quadrupole field when a first excitation is applied to the first corrective component, and a second corrective component that generates a second quadrupole field when a second excitation is applied to the second corrective component. Correctors according to the present disclosure also include a quadrupole positioned between the second corrective component and the sample when used in the charged particle microscope system that generates a third quadrupole field. The third quadrupole field, in combination with at least the first quadrupole field and the second quadrupole field, corrects the fifth-order, two-fold aberrations when the charged particle microscope is in use.

Correctors for correcting two-fold, fifth-order parasitic aberrations in charged particle systems according to the present disclosure include a first corrective component that generates a first quadrupole field when a first excitation is applied to the first corrective component, and a second corrective component that generates a second quadrupole field when a second excitation is applied to the second corrective component. Correctors according to the present disclosure also include a quadrupole positioned between the second corrective component and the sample when used in the charged particle microscope system that generates a third quadrupole field. The third quadrupole field, in combination with at least the first quadrupole field and the second quadrupole field, corrects the fifth-order, two-fold aberrations when the charged particle microscope is in use.

An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

A scanning electron microscope with a composite detection system and a specimen detection method. The scanning electron microscope includes a composite objective lens system including an immersion magnetic lens and an electro lens, configured to focus an initial electron beam to a specimen to form a convergent beam spot; a composite detection system located in the composite objective lens system; and a detection signal amplification and analysis system. A magnetic field of the immersion magnetic lens is immersed in the specimen; the electro lens is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate BSEs from a transmission path of an X-ray; the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and includes an annular BSE detector and an annular X-ray detector that have a same axis center.

A scanning electron microscope with a composite detection system and a specimen detection method. The scanning electron microscope includes a composite objective lens system including an immersion magnetic lens and an electro lens, configured to focus an initial electron beam to a specimen to form a convergent beam spot; a composite detection system located in the composite objective lens system; and a detection signal amplification and analysis system. A magnetic field of the immersion magnetic lens is immersed in the specimen; the electro lens is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate BSEs from a transmission path of an X-ray; the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and includes an annular BSE detector and an annular X-ray detector that have a same axis center.

A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.

When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, the invention is directed to a scanning electron microscope including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination.