Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.

Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron source 100 that emits an electron beam and an objective lens 113, a sample stage 1025 which is disposed on a stage 115 and on which a sample 114 is placed, a backscattered electron detector 1023 which is disposed between the objective lens and the sample stage and is configured to detect backscattered electrons 1017 emitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unit 138 which is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device 146. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

A method for imaging a sample with charged particles comprises directing charged particles towards the sample along a primary axis, and simultaneously detecting a first portion and a second portion of the charged particles transmitted through the sample with a first detector and a second detector, respectively. The second detector is positioned downstream of the first detector. Each of the transmitted charged particles exits the sample at an exit angle between a direction of the transmitted charged particle and the primary axis. The exit angles of the first portion of the transmitted charged particles overlap with the exit angles of the second portion of the transmitted charged particles. In this way, complimentary information, such as the structural and compositional information, may be obtained simultaneously.