The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.

A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

An object receiving container may receive an object which is examinable, analyzable and/or processable at cryo-temperatures. An object holding system may comprise an object receiving container. A beam apparatus or an apparatus for processing an object may comprise an object receiving container or an object holding system. An object may be examined, analyzed and/or processed using an object receiving container or an object holding system. The object receiving container may comprise a first container unit, a cavity for receiving the object, a second container unit, which is able to be brought into a first position and/or into a second position relative to the first container unit, and at least one fastening device which is arranged at the first container unit or at the second container unit for arranging the object receiving container at a holding device.

An object receiving container may receive an object which is examinable, analyzable and/or processable at cryo-temperatures. An object holding system may comprise an object receiving container. A beam apparatus or an apparatus for processing an object may comprise an object receiving container or an object holding system. An object may be examined, analyzed and/or processed using an object receiving container or an object holding system. The object receiving container may comprise a first container unit, a cavity for receiving the object, a second container unit, which is able to be brought into a first position and/or into a second position relative to the first container unit, and at least one fastening device which is arranged at the first container unit or at the second container unit for arranging the object receiving container at a holding device.

A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.

A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.

A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.

A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.

A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.

A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.