Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

An electron optical module for providing an off-axial electron beam with a tunable coma, according to the present disclosure includes a structure positioned downstream of an electron source and an electron lens assembly positioned between the structure and the electron source. The structure generates a decelerating electric field, and is positioned to prevent the passage of electrons along the optical axis of the electron lens assembly. The electron optical module further includes a micro-lens that is not positioned on the optical axis of the electron lens assembly and is configured to apply a lensing effect to an off-axial election beam. Aberrations applied to the off-axial electron beam by the micro-lens and the electron lens assembly combine so that a coma of the off-axial beam has a desired value in a downstream plane.

Disclosed herein are scientific instrument support systems, as well as related methods, apparatus, computing devices, and computer-readable media. For example, some embodiments provide a scientific instrument comprising an ion-beam instrument configured to generate an ion beam including first and second sub-beams; an electron-beam instrument including a charged-particle-beam (CPB) lens having an adjustable setting controlling a magnetic force applied to the first and second sub-beams; and a computing device. The computing device is configured to: acquire an image by causing the ion-beam instrument to scan the ion beam across a sample using a selected setting of the CPB lens of the electron-beam instrument, apply automated image processing to the image to quantify an amount of spatial misalignment of the first and second sub-beams at the sample, and control the CPB lens of the electron-beam instrument to a setting based on the amount of spatial misalignment within the image.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A motorized stage is provided to hold and move a sample in the vacuum chamber. A charged-particle beam source generates a charged-particle beam. Charged-particle beam optics converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the sample. A controller analyzes the detected charged-particle radiation to generate an image of the sample. A power supply powers at least the charged-particle beam optics and the controller. The charged-particle beam microscope weighs less than about 50 kg.

A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

The present invention addresses the problem of providing a method for automatically adjusting an electron beam emitted from an electron gun equipped with a photocathode to the incident axis of an electron optical system. [Solution] An incident axis alignment method for an electron gun equipped with a photocathode, the electron gun being capable of emitting an electron beam in a first state due to the photocathode being irradiated with excitation light, and the method including at least an excitation light radiation step, a first excitation light irradiation position adjustment step for changing the irradiation position of the excitation light on the photocathode and adjusting the irradiation position of the excitation light, and an electron beam center detection step for detecting whether a center line of the electron beam in the first state coincides with an incident axis of an electron optical system.

A method of influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam (11) through at least one opening (102) of a multipole device (100, 200) that comprises a first multipole (110, 210) with four or more first electrodes (111, 211) and a second multipole (120, 220) with four or more second electrodes (121, 221) arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device (100, 200) with a first multipole (110, 210) and a second multipole (120, 220) provided on the same substrate as well as a charged particle beam apparatus (500) with a multipole device (100, 200) are provided.