Patent classifications
H01J37/1471
Charged particle optical apparatus for through-the-lens detection of particles
Disclosed is a charged particle optical apparatus. The charged particle optical apparatus has a liner electrode in a first vacuum zone. The liner electrode is used to generate an electrostatic objective lens field. The apparatus has a second electrode which surrounds at least a section of the primary particle beam path. The section extends in the first vacuum zone and downstream of the liner electrode. A third electrode is provided having a differential pressure aperture through which the particle beam path exits from the first vacuum zone. A particle detector is configured for detecting emitted particles, which are emitted from the object and which pass through the differential pressure aperture of the third electrode. The liner electrode, the second and third electrodes are operable at different potentials relative to each other.
PARTICLE BEAM SYSTEM FOR AZIMUTHAL DEFLECTION OF INDIVIDUAL PARTICLE BEAMS AND METHOD FOR AZIMUTH CORRECTION IN A PARTICLE BEAM SYSTEM
A particle beam system includes a multi-beam particle source for generating a multiplicity of charged individual particle beams, and a magnetic multi-deflector array for deflecting the individual particle beams in the azimuthal direction. The magnetic multi-deflector array includes a magnetically conductive multi-aperture plate having a multiplicity of openings, which is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the openings of the multi-aperture plate. The magnetic multi-deflector array also includes a magnetically conductive aperture plate having an individual opening. The aperture plate is arranged in the beam path of the particle beams such that the individual particle beams substantially pass through the first aperture plate. The multi-aperture plate and the first aperture plate are connected to each other such that a cavity is formed between the two plates. A first coil for generating a magnetic field is arranged in the cavity between the first aperture plate and the multi-aperture plate such that the multiplicity of individual particle beams substantially pass through the coil.
Multi-beam inspection apparatus with improved detection performance of signal electrons
The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.
INSPECTION APPARATUS AND METHOD
An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.
Multi-pole deflector for charged particle beam and charged particle beam imaging apparatus
The invention provides a multi-pole deflector for a charged particle beam, and a charged particle beam imaging apparatus. The deflector includes a plurality of poles, including at least two pairs of poles, each pole in each pair of poles including a main body constructed in the form of a circular arc-shaped section and a protrusion projecting from an radial inner side of the main body. respective two main bodies of each pair of poles are arranged concentrically and diametrically opposite, and the at least two pairs of poles at least partially encompass and delimit a through-hole thereamong, which opens axially and is configured to receive and to pass therethrough the charged particle beam; and the at least two pairs of poles cooperate to generate respective secondary deflection fields distributed within the through-hole and across an internal space defined within the through-hole, respectively, and the secondary deflection fields are synthesized by combination of vectors into a resultant deflection field of the deflector which is distributed within and across the through-hole and is configured to deflect the charged particle beam passing therethrough.
Charged particle beam device and charged particle beam adjustment method
Provided are a charged particle beam device and a charged particle beam adjustment method capable of observing or inspecting a change in observation conditions in a more appropriate beam state while preventing an increase in a time required for each measurement point. The charged particle beam device includes a condenser lens 3 and an objective lens 14 configured to focus an electron beam 4 emitted from an electron source 2, a primary beam scanning deflector 5 or a secondary electron deflector 15, an adjusting element 13 configured to adjust an axis of the electron beam 4, and a control device 9 configured to supply a signal representing a control amount to the adjusting element 13 for control. The control device 9 is configured to determine the control amount by using a change amount of an intensity of the condenser lens 3, the objective lens 14, the primary beam scanning deflector 5, or the secondary electron deflector 15, and a calculation formula or a table showing a relation between the change amount of the intensity and the control amount.
SYSTEM AND METHOD FOR BARE WAFER INSPECTION
A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.
CHARGED PARTICLE BEAM ADJUSTMENT METHOD, CHARGED PARTICLE BEAM DRAWING METHOD, AND CHARGED PARTICLE BEAM IRRADIATION APPARATUS
A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.
SYSTEMS AND METHODS FOR FOCUSING CHARGED -PARTICLE BEAMS
Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.
Wien filter and charged particle beam imaging apparatus
A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof.