Patent classifications
H01J37/1472
Charged Particle Beam Apparatus
An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.
INFRASTRUCTURE-SCALE ADDITIVE MANUFACTURING USING MOBILE ELECTRON ACCELERATORS
A method and system for in situ cross-linking of polymers, Bitumen, and other materials to produce arbitrary functional or ornamental three-dimensional features using electron beams provided by mobile accelerators comprises defining a desired pattern for imparting on a target area, mapping the target area, defining at least one discrete voxel in the target area according to the desired pattern to be imparted on the target area, assigning an irradiation value to each of the at least one discrete voxels, and delivering a dose of irradiation to each of the at least one discrete voxels according to the assigned irradiation value.
PRIMARY CHARGED PARTICLE BEAM CURRENT MEASUREMENT
It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.
STROBOSCOPIC ILLUMINATION SYNCHRONIZED ELECTRON DETECTION AND IMAGING
An apparatus includes an electron source coupled to provide an electron beam, a beam deflector arranged to provide a pulsed electron beam from the electron beam, a detector arranged to receive the pulsed electron beam after transmitting through a sample, and a controller coupled to control at least the beam deflector and the detector, the controller coupled to or including code that, when executed by the controller, causes the apparatus to establish the pulsed electron beam with pulse characteristics based on control of at least the beam deflector, wherein an illumination window is formed based on the pulse characteristics, the illumination window being a time frame when the sample is illuminated with a pulse of the pulsed electron beam, and to form a detection window for the detector and synchronize the detection window in relation to the illumination window, wherein detection events occurring in the detection window form the basis of an image, wherein the detection window determines a time frame when the detector converts the pulse of the pulsed electron beam transmitted through the sample to an electron induced signal.
Modulation of ion beam angle
Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.
Method and system for the removal and/or avoidance of contamination in charged particle beam systems
A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.
APPARATUS OF PLURAL CHARGED-PARTICLE BEAMS
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.
MODULATION OF ROLLING K VECTORS OF ANGLED GRATINGS
Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material.
Systems and methods for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus
Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device.
Multi-beam inspection apparatus with improved detection performance of signal electrons
The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.