An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

The present invention addresses the problem of providing an electron beam generator and an electron beam applicator for which maintenance is facilitated. The electron beam generator comprises a vacuum chamber, a photocathode holder, an activation vessel, and an internal motive power transmission member. The photocathode holder is capable of moving relative to the activation vessel.

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material.

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

A plasma processing system is disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly surrounding the ESC. The edge ring assembly includes a coupling ring and temperature modifying elements disposed within the coupling ring.

A plasma processing system is disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly surrounding the ESC. The edge ring assembly includes a coupling ring and temperature modifying elements disposed within the coupling ring.

A plasma processing system has been disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly. The edge ring assembly has a conductive ring configured to generate an electric field to adjust the direction of ions.

A plasma processing system has been disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly. The edge ring assembly has a conductive ring configured to generate an electric field to adjust the direction of ions.

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material.