H01J37/15

PARTICLE BEAM SYSTEM
20240170248 · 2024-05-23 ·

The invention relates to a particle beam system (PBS) comprising a particle guiding tube, one or more transversely movable electrodes (of a defined type) providing a transverse electric and/or magnetic field (pulse or linear) wherein a particle flow can be influenced by the electrodes which can further have a defined shape. The PBS can be provided with a protective film and/or an insulation, it can form a mono and/or stereo particle path. The PBC can provide a cross-sectionally shaped beam, an adjustable optical axis, a rotating electric and/or magnetic field, a circularly polarized beam. The PBS can form an array, it can comprise one or more connections, one or more modules. The PBC can be coupled with electro- and/or mechanocomponents. The PBC can form lenses configured in a separate eye ray configuration. A method for providing a particle beam and a digitizer of photographic or X-ray images are proposed.

ION BEAM APPARATUS INCLUDING SLIT STRUCTURE FOR EXTRACTING ION BEAM
20190237292 · 2019-08-01 ·

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

ION BEAM APPARATUS INCLUDING SLIT STRUCTURE FOR EXTRACTING ION BEAM
20190237292 · 2019-08-01 ·

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

Ion beam apparatus including slit structure for extracting ion beam, etching method using the same, and method for manufacturing magnetic memory device using the ion beam apparatus
10347459 · 2019-07-09 · ·

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

Ion beam apparatus including slit structure for extracting ion beam, etching method using the same, and method for manufacturing magnetic memory device using the ion beam apparatus
10347459 · 2019-07-09 · ·

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

Charged particle beam device and axis adjustment method thereof

A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.

Charged particle beam device and axis adjustment method thereof

A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.

METHOD AND APPARATUS FOR INSPECTION

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

METHOD AND APPARATUS FOR INSPECTION

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Adjustable support for arc chamber of ion source

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.