An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.

In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.

Methods, tools and systems for patterning of substrates using charged particle beams without photomasks, without a resist layer, using multiple different processes (different chemistry processes and/or different ones of material deposition, removal and/or modification) in the same vacuum space, wherein said processes are performed independently (without cross-interference) and simultaneously. As a result, the number of process steps can be reduced and some lithography steps can be eliminated, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Also, because such processes are resist-less, layer-to-layer registration and other column control processes can be performed by imaging previous-layer features local to (or in contact with) features to be written in a next layer as designated by the design layout database.

Methods, tools and systems for patterning of substrates using charged particle beams without photomasks, without a resist layer, using multiple different processes (different chemistry processes and/or different ones of material deposition, removal and/or modification) in the same vacuum space, wherein said processes are performed independently (without cross-interference) and simultaneously. As a result, the number of process steps can be reduced and some lithography steps can be eliminated, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Also, because such processes are resist-less, layer-to-layer registration and other column control processes can be performed by imaging previous-layer features local to (or in contact with) features to be written in a next layer as designated by the design layout database.

Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

A system that utilizes a component that controls thermal gradients and the flow of thermal energy by variation in density is disclosed. Methods of fabricating the component are also disclosed. The component is manufactured using additive manufacturing. In this way, the density of different regions of the component can be customized as desired. For example, a lattice pattern may be created in the interior of a region of the component to reduce the amount of material used. This reduces weight and also decreases the thermal conduction of that region. By using low density regions and high density regions, the flow of thermal energy can be controlled to accommodate the design constraints.

The present disclosure relates to a delivery device, a substrate ion-implanting system and a substrate ion-implanting method. The substrate ion-implanting system includes: a substrate-supporting table and an ion-implantation device connected to the substrate-supporting table. A substrate is movable from the substrate-supporting table into the ion-implantation device. The ion-implantation device includes an operation chamber, and the substrate is transferred to the operation chamber for implanting ions by the ion-implantation device. A transfer chamber is configured to transfer back the substrate after implanting the ions to the substrate-supporting table. By the above means, the present disclosure can improve the productivity of the substrate ion-implanting system.