A multi-beam particle beam system includes a multi-aperture plate having a multiplicity of apertures. During operation, one particle beam of the plurality of particle beams passes through each of the apertures. A multiplicity of electrodes are insulated from the second multi-aperture plate to influence the particle beam passing through the aperture. A voltage supply system for the electrodes includes: a signal a generator to generate a serial sequence of digital signals; a D/A converter to convert the digital signals into a sequence of voltages between an output of the D/A converter and the multi-aperture plate; and a controllable changeover system, which feeds the sequence of voltages successively to different electrodes.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

A multicolumn charged particle beam exposure apparatus includes a plurality of column cells which generate charged particle beams, and the column cell includes a yoke which is made of a magnetic material and generates a magnetic field of a predetermined intensity distribution around an optical axis of the column, and a coil which is wound around the yoke. The coil includes a plurality of divided windings, which are driven by different power sources.

In one embodiment, a method for inspecting a blanking plate includes generating a plurality of beams by causing a charged particle beam to pass through a shaping aperture array having a plurality of holes, performing blanking deflection on the plurality of beams by using a plurality of blankers provided in a blanking plate, each of the plurality of blankers corresponding to one of the plurality of beams, writing a first inspection pattern on a substrate by using a first writing mode in which beams that have not been deflected by the plurality of blankers are radiated onto the substrate, writing a second inspection pattern on the substrate by using a second writing mode in which beams that have been deflected by the plurality of blankers are radiated onto the substrate, obtaining a pattern image of the first inspection pattern and a pattern image of the second inspection pattern, the first and second inspection patterns having been formed on the substrate, and determining a defect by comparing the obtained pattern images.

A multi charged particle beam blanking apparatus includes a substrate, where a plurality of passage holes are formed, to let multi-beams of charged particle beams individually pass through a passage hole concerned; a plurality of reference electrodes, each arranged close to a corresponding passage hole, to be applied with a reference potential, not a ground potential, not via a transistor circuit, in an irradiation region of the whole multi-beams; and a plurality of switching electrodes, arranged at the substrate such that each of the plurality of switching electrodes and a corresponding paired one of the plurality of reference electrodes are opposite each other across a corresponding passage hole, to be applied with the reference potential and a control potential different from the reference potential in a switchable manner.

A includes arranging a substrate in a working region of a first particle beam column and a second particle beam column; producing a desired target structure on the substrate by directing a first particle beam generated by the first particle beam column at a multiplicity of sites of the substrate to deposit material thereon or to remove material therefrom;

repeatedly interrupting the production of the desired target structure and producing a marking on the substrate by directing the first particle beam onto the substrate and continuing the production of the desired target structure; and capturing positions of the markings on the substrate by directing a second particle beam produced by the second particle beam column onto the markings on the substrate, and detecting particles or radiation which are produced in the process by the second particle beam on the substrate.

A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.

It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

In one embodiment, a multi charged particle beam evaluation method includes writing a plurality of evaluation patterns on a substrate by using multi charged particle beams, with a design value of a line width changed by a predetermined change amount at a predetermined pitch, measuring the line widths of the plurality of evaluation patterns thus written, and extracting a variation in a specific period of a distribution of differences between results of a measurement value and the design value of each of the line widths of the plurality of evaluation patterns. The predetermined change amount is equal to or larger than data resolution and smaller than a size of each of pixels, each of which is a unit region to be irradiated with one of the multi charged particle beams.