A transfer module for transferring power to a non-thermal plasma generator includes a power cable; a first epoxy; a second epoxy; an interface between the first epoxy and the second epoxy; and a well; the power cable including a conductor for conducting electrical power and an insulation layer for surrounding a portion of the conductor; the first epoxy being located within the well to surround the insulation layer; the second epoxy being located within the well to surround the conductor located within the well; the second epoxy being located outside the well to surround the conductor located outside the well.

Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a <110> crystalline orientation plane approximately parallel to a top surface of the substrate.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a <110> crystalline orientation plane approximately parallel to a top surface of the substrate.

A piezoelectric substrate manufacturing device that includes first and electrodes that face each other with a piezoelectric substrate interposed therebetween; a cover that surrounds the second electrode such that the leading end of the second electrode is exposed; a supply unit that supplies a processing gas to an internal space of the cover; a processing unit that performs surface processing on the piezoelectric substrate by applying a voltage between the first and second electrodes causing the processing gas to change into plasma; a detector that is provided outside the cover with its relative position fixed with respect to the second electrode; a measurement unit that measures the thickness of the piezoelectric substrate using the detector; a driving unit that changes the relative positions of the first and second electrodes; and a control unit that controls the supply unit, the processing unit, the measurement unit, and the driving unit.