Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500 C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

A power feed member having high heat insulation and capable of transmitting a power at a low loss is provided. The power feed member configured to supply a power includes a first conductive member; a second conductive member; and a connecting member configured to electrically connect the first conductive member and the second conductive member. At least a part of the connecting member is formed of a porous metal or multiple bulk metals.

Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

A method of performing impedance matching between a power supply section of a plasma processing apparatus and a chamber in the plasma processing apparatus is provided. The plasma processing apparatus includes multiple matchers, each configured to perform impedance matching between the power supply section and the chamber, and the power supply section is configured to output superimposed voltage in which radio frequency voltage is superimposed on pulsating DC voltage. According to the method, the superimposed voltage from the power supply section is applied to the chamber, through one of the provided matchers, and the matcher through which the superimposed voltage is applied to the chamber is then switched in accordance with a state of the pulsating DC voltage.

A transfer module for transferring power to a non-thermal plasma generator includes a power cable; a first epoxy; a second epoxy; an interface between the first epoxy and the second epoxy; and a well; the power cable including a conductor for conducting electrical power and an insulation layer for surrounding a portion of the conductor; the first epoxy being located within the well to surround the insulation layer; the second epoxy being located within the well to surround the conductor located within the well; the second epoxy being located outside the well to surround the conductor located outside the well.

A method for etching a substrate includes: (a) providing a substrate processing apparatus including a processing chamber that forms a processing space, a substrate support provided inside the processing chamber to hold a substrate, and a power supply that supplies a bias power to at least the substrate support; (b) providing the substrate on the substrate support, the substrate including an underlying layer and an organic material layer on the underlying layer; (c) generating plasma in the processing chamber; and (d) repeating a predetermined cycle including an ON time during which the bias power is supplied to the substrate support and an OFF time during which the bias power is not supplied to the substrate support. The OFF time is 10 msec or longer.

Multi-phase interleaving control of a power supply device is accelerated. Furthermore, in accelerating the multi-phase interleaving control in the power supply device, detection of feedback signal is accelerated. In the power supply device and a method for controlling the power supply device, output voltage is acquired as an operation result of a discrete time process using an initial value of the output voltage at a predetermined point, and a detection value of capacitance current at each point of the discrete time process. Accordingly, only detection of the initial value is performed when the output voltage being slow in response is acquired, and detection performed in the discrete time process can be accomplished by detection of capacitance current being rapid in response, thus enabling rapid response.

An IMS ionizer comprising a wire, a second conductor, and a dielectric, when the first conductor and second conductor are energized to an ionization voltage, discharge ionization occurs. The dielectric is a glass element formed in a tubular shape defining an inner wall. The wire is formed in coils in contact with said inner wall. The second conductor is positioned to define an outer wall of the tube. The tube has an inlet end for receiving the sample, and an outlet end through which the sample exits after ionization.

A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.