A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source configured to excite gases supplied to the first space; and a potential adjustment part including an electrode to be capacitively coupled to a plasma generated in the first space, and configured to adjust a potential of the plasma.

A piezoelectric substrate manufacturing device that includes first and electrodes that face each other with a piezoelectric substrate interposed therebetween; a cover that surrounds the second electrode such that the leading end of the second electrode is exposed; a supply unit that supplies a processing gas to an internal space of the cover; a processing unit that performs surface processing on the piezoelectric substrate by applying a voltage between the first and second electrodes causing the processing gas to change into plasma; a detector that is provided outside the cover with its relative position fixed with respect to the second electrode; a measurement unit that measures the thickness of the piezoelectric substrate using the detector; a driving unit that changes the relative positions of the first and second electrodes; and a control unit that controls the supply unit, the processing unit, the measurement unit, and the driving unit.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.

Multi-phase interleaving control of a power supply device is accelerated. Furthermore, in accelerating the multi-phase interleaving control in the power supply device, detection of feedback signal is accelerated. In the power supply device and a method for controlling the power supply device, output voltage is acquired as an operation result of a discrete time process using an initial value of the output voltage at a predetermined point, and a detection value of capacitance current at each point of the discrete time process. Accordingly, only detection of the initial value is performed when the output voltage being slow in response is acquired, and detection performed in the discrete time process can be accomplished by detection of capacitance current being rapid in response, thus enabling rapid response.

A plasma processing apparatus includes a chamber and a substrate support provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The power supply unit applies a second DC voltage to the lower electrode during the generation of plasma from the etching gas in the chamber, to etch the substrate placed on the substrate support. The second DC voltage is a negative DC voltage. The DC voltage output by the power supply unit is continuously switched from the first DC voltage to the second DC voltage.