A gas passing groove, a high-voltage electrode groove, and a ground electrode groove provided to an electrode unit base are each helical in plan view. An electrode unit lid is placed on a front surface of the electrode unit base so that a high-voltage conduction hole and a high-voltage conduction point coincide with each other in plan view. An electrode cooling plate is placed on a front surface of the electrode unit lid so that a high-voltage opening includes the high-voltage conduction hole as a whole in plan view. The electrode unit lid and the electrode cooling plate are placed on the front surface of the electrode unit base so that a ground conduction groove, a ground conduction hole, and a ground conduction point coincide with one another in plan view.

Apparatus comprising: a support arranged to transport a moving substrate; a plasma generator arranged to generate plasma; and an electrode arranged to bias ions within the plasma towards the moving substrate to form an ion flux. The ion flux has an energy level between 3.6 eV and 250 eV. Alternatively, apparatus for defining plasma having a plurality of spaced race track portions.

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

An atmospheric pressure plasma system includes an atmospheric pressure plasma source that generates a glow discharge-type plasma. The atmospheric pressure plasma source comprises a plasma head, a heating element and an active cooling element and the heating element and active cooling element control the plasma head temperature to a set-point temperature independent of variations in plasma generating power or plasma power ON/OFF status.

Provided is a high frequency power source allowing the user to arbitrarily set a temporal change pattern for the value of high frequency power to be outputted. A high frequency power source 10A according to the present invention includes an output portion 20 configured to output high frequency power to a load 40 via an impedance matching circuit 30, a data storage portion 13A configured to store command data created by a user, and a control portion 12A configured to control the output portion 20 and the impedance matching circuit 30 on the basis of the command data stored in the data storage portion 13A. Each of a plurality of records that constitute the command data includes power command data about a value of high frequency power to be outputted and matching operation command data about whether to activate the impedance matching circuit 30, and the control portion sends a power signal, which is generated on the basis of the power command data, to the output portion and a synchronization signal, which is generated on the basis of the matching operation command data, to the impedance matching circuit.

The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control delivering the bipolar output power to the power output ports, using at least one control parameter. The controller is configured to obtain a full set of desired values for the control parameter for the power output ports, calculate whether the power converter is capable of delivering every desired value to every output port, and if so, calculate a sequence of pulses of power delivery to the output ports to supply the power to plasma processes in the plasma processing chambers.

A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps. In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps.