Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

This disclosure is generally directed to controlling energy distribution to a load, especially when anomalous events are detected. Benefits of the present disclosure include minimizing the length of a discharge event, mitigating the effects of an electrical discharge, and to improvements in inducing the ignition of a plasma. Methods and systems consistent with the present disclosure improve the control of operating conditions within a chamber and improve the ability for more rapidly initiating plasma ignition in a chamber.

A control circuit for outputting a pulsed signal includes a switch circuit having a first terminal, a second terminal, a third terminal, a fourth terminal, a first control terminal, and a second control terminal, where the first terminal and the second terminal input the DC signal, the third terminal and the fourth terminal output the pulsed signal, the third terminal and the fourth terminal output the pulsed signal in response to the first control terminal and the second control terminal receiving the first signal, and stop outputting the pulsed signal in response to the first control terminal and the second control terminal receiving the second signal; and an energy storage circuit having two terminals connected to the first terminal and the second terminal of the switch circuit to store residual electric energy of the switch circuit when the switch circuit does not output the pulsed signal.

A portable container is provided for handling an implant. The portable container comprises a sealed compartment enclosing a fluid of a pre-defined composition and at least one implant configured to be installed in a live subject. The portable container may further comprise at least one electrode made of an electrical conductive material, electrically associated with an electric conductor outside the sealed compartment and configured for applying a plasma generating electric field inside the sealed compartment. An apparatus for plasma treatment of an implant and having an activation device is further provided. The activation device comprises a slot configured to receive a portable container, and an electrical circuit configured to be electrically associated with at least one electrode. The electrical circuit is configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the sealed compartment, when the portable container is disposed in the slot.

There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

In an apparatus for thermal treatment of substrates, a gas discharge lamp runs in a simmer mode in standby operation. A constant power supply may be connected to the gas discharge lamp via a first switch. At least one charged capacitor may be connected to the gas discharge lamp via a second switch. A thermal treatment of the end side of a substrate with a duration of between 20 milliseconds and 500 milliseconds is provided in a manner governed by light absorption. This time window is advantageous for thermal treatment of coatings having a thickness of 2 to 200 micrometers, wherein the temperature of the rear side of the substrate can remain below that of the end side. The temperature on the end side can be significantly increased by the gas discharge lamp being connected to the capacitor via the second switch at the end of the time window.

A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

This disclosure is generally directed to controlling energy distribution to a load, especially when anomalous events are detected. Benefits of the present disclosure include minimizing the length of a discharge event, mitigating the effects of an electrical discharge, and to improvements in inducing the ignition of a plasma. Methods and systems consistent with the present disclosure improve the control of operating conditions within a chamber and improve the ability for more rapidly initiating plasma ignition in a chamber.