A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption. The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

A composite stage for electron enhanced material processing is presented. The composite stage provides capacitive coupling of a biasing signal to a substrate supported by the composite stage. The composite stage comprises a pedestal and a support plate that includes stacked layer construction. The stacked layer construction includes a plurality of layers of electrically conductive and dielectric materials. According to one aspect, the plurality of layers includes at least one electrically conductive layer for receiving a basing signal, and at least one dielectric layer in contact with and overlying the at least one electrically conductive layer. According to one aspect, the substrate is held in place via an electrically insulating clamp, the clamp providing an aperture for processing of a portion of the substrate. A matching circuit is arranged between a biasing signal generator and the composite stage. A shunting resistor is coupled to the matching circuit.

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.

A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

A plasma generation device includes: a pair of electrodes that cause plasma to be generated in atmospheric pressure by a voltage being applied between the pair of electrodes; and a power source that includes a step-up transformer that has a coupling coefficient of 0.9 or greater and 0.9999 or less and generates the voltage.

A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.

Provided are methods, apparatus and systems for stabilization of a glow discharge from a plasma. Also provided are methods, apparatus and systems for processing optical signals from a stabilised glow plasma with enhanced signal to noise recovery. A first method comprises: generating an electric field within a plasma cell using an alternating excitation voltage to excite particles within the cell, to produce a glow discharge from a plasma in the plasma cell in a resonant condition; monitoring, in each excitation cycle of the alternating excitation voltage, one or more signals that correlate with glow discharge optical emissions from the plasma in the plasma cell; and, in response to said monitoring, controlling one or more operating conditions for the plasma cell to maintain the glow discharge emissions from the plasma within a desired operating range in each excitation cycle of the alternating excitation voltage. A relatively stable glow discharge optical emission is maintained via dynamic resonant feedback control of operating conditions such as the electric field that is used to excite particles within the plasma cell. The stabilization of the glow plasma can be used in glow discharge optical emission spectroscopy (GD-OES) for gas analysis and in other applications.

According to one embodiment of the present specification, there can be provided an apparatus for generating plasma, comprising: a chamber configured to provide a generating space for the plasma; an antenna module placed adjacent to the chamber and configured to be connected to a first power source and generate induced electric field in the chamber; an electrode placed adjacent to the chamber and configured to be connected to a second power source and assist in a generation of the plasma; a sensor configured to obtain sensing information related to a status of the plasma; and a controller configured to control the first power source and the second power source.

A control circuit for at least two drivers is provided. Each of the two drivers is configured to switch on and off electrically driven switching elements that are electrically connected to each other. The control circuit includes a first parallel-to-serial-converter including a first parallel input port and a first serial output-port connectable to a first driver, a second parallel-to-serial-converter including a second parallel input port and a second serial output-port connectable to a second driver, and a processor unit configured to send a first data package stream to the first parallel input port, and send a second data package stream to the second parallel input port. Both the first data package stream and the second data package stream are configured to be converted to serial-data-streams at the first serial output-port and the second serial output-port, respectively. The serial data-streams are configured to control the at least two drivers.