This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

This disclosure is generally directed to controlling energy distribution to a load, especially when anomalous events are detected. Benefits of the present disclosure include minimizing the length of a discharge event, mitigating the effects of an electrical discharge, and to improvements in inducing the ignition of a plasma. Methods and systems consistent with the present disclosure improve the control of operating conditions within a chamber and improve the ability for more rapidly initiating plasma ignition in a chamber.

A coating system that reduces parasitic currents that may cause crazing in coatings on a substrate. In one example, the system includes a pair of low impedance shunt paths to ground for parasitic AC currents generated from the plasma in the chamber. The low impedance shunts may be provided through a balanced triaxial connection between a power supply of each chamber and the magnetrons of each chamber. In another example, potential differences between adjacent chambers are minimized through synchronized power supply signals between chambers.

A method to stabilize position and shape of a plasma beam established between a cathode and an anode, where an electrical field is established between the cathode and the anode and where the shortest electrical field line between the cathode and the anode defines a reference line, wherein at least one oriented electromagnetic coil is provided and the at least one oriented electromagnetic coil has its coil axis oriented in a non-colinear manner to the reference line in such a way that at least one of the straight lines which are intersecting both of the coil openings and which are parallel to the coil axis intersects with the reference line and where a current is sent through the at least one oriented electromagnetic coil in order to establish a magnetic field which is used to deflect or attract the plasma beam.

In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.

The Diffusive Plasma is for effective treatment of contaminated air and material processing. Air is purified and disinfected by passing through the diffusive plasma device which includes a reactor or a plurality of reactors arranged in parallel or series and is energized by a high voltage alternating current power supply. The diffuser, being electrically isolated, provides extra nucleation sites to initiate discharges. It serves to improve the generation of uniform and consistent plasma and to reduce the variation of discharge properties among the reactors. The addition of a diffuser, thereby, enhances the overall effectiveness of decomposing chemicals and destroying microbes to achieve high air treatment and material processing performance. The diffuser can be made of suitable filtering materials to additionally serve as a filter. By incorporating suitable catalytic materials with the diffuser, the reactor becomes a catalytic plasma reactor wherein the plasma environment provides enhanced catalytic functions. Effective plasma power deposition may be obtained by controlling the amplitude, waveform period and shape of the voltage applied to the electrodes of the reactor and hence the operation of the reactors with plasma discharged of selected conditions for optimizing the treatment and processing efficiency while minimizing the generation of unwanted bi-product gases. The present invention also relates to a method for effective air treatment and material processing.

There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines the plasma generation chamber or a member that is to be exposed to the plasma generated inside the plasma generation chamber with a laser beam.

In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.