Embodiments provided herein generally include apparatus, e.g., plasma processing systems and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across the surface of the substrate, reducing defectivity on the surface of the substrate, or both. In some embodiments, the apparatus and methods provide for improved control over the uniformity of a plasma formed over the edge of a substrate and/or the distribution of ion energies at the surface of the substrate. The improved control over the plasma uniformity may be used in combination with substrate handling methods, e.g., de-chucking methods, to reduce particulate-related defectivity on the surface of the substrate. In some embodiments, the improved control over the plasma uniformity is used to preferentially clean accumulated processing byproducts from portions of the edge ring during an in-situ plasma chamber cleaning process.

A plasma processing apparatus in which a radio-frequency power supply modulates radio-frequency power such that the level of the radio-frequency power in a first period is higher than the level of the radio-frequency power in a second period. The second period alternates with the first period. A bias power supply modulates bias energy such that the level of the bias energy in a third period is higher than the level of the bias energy in a fourth period. The fourth period alternates with the third period. The bias power supply adjusts the time difference between the start point of the first period and the start point of the third period which partially overlaps with the first period according to the power coupling efficiency of the radio-frequency power to the plasma, obtained from a power of a traveling wave and a power of a reflected wave.

A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Methods, systems, and computer programs are presented for manufacturing a showerhead for a semiconductor manufacturing system. One method includes an operation for drilling first holes on a faceplate made of a first material, where the first holes have a first diameter. Further, the method includes an operation for cladding the first holes and the faceplate with a second material to cover the first holes and the faceplate with the second material. Further yet, the method includes drilling second holes concentric with the first holes resulting in a part with holes coated with the second material. The second holes have a second diameter that is smaller than the first diameter. Additionally, the method includes an operation for creating the showerhead utilizing the part, where gas is deliverable through the second holes of the faceplate in the showerhead.

A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.

A method for controlling cleaning of an inner surface of a chamber of a plasma processing apparatus is provided. The method comprises; processing a substrate using plasma generated in the chamber, the substrate being disposed on a substrate support in the chamber and in a region surrounded by an edge ring placed on the substrate support and to which a DC voltage is applied during the plasma generation; measuring a self-bias potential of the edge ring during the plasma generation in said processing the substrate; and controlling the cleaning of the inner surface of the chamber in response to the self-bias potential.

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher. In this way, the lower electrode is fixed on the chamber body via the retractable sealing part, such that when the lower electrode is driven by the driving means to move up/down, the chamber body does not move along with it, and the radio frequency loop in the chamber body is in a steady state, thereby achieving stability of the radio frequency loop while implementing adjustability of the plate distance.