Provided is a filter device includes: a first coil group including a plurality of coils arranged along a central axis and spirally wound with a first inner diameter; and a second coil group including a plurality of coils arranged along the central axis and spirally wound with a second inner diameter larger than the first inner diameter. A pitch between respective turns of the plurality of coils of the second coil group is larger than a pitch between respective turns of the plurality of coils of the first coil group.

A flow guide apparatus includes an upper flow guide structure configured to receive a first gas from a remote source, and a lower flow guide structure attached to the upper flow guide structure. The upper flow guide structure and the lower flow guide structure are configured to receive at least one gas from at least one remote source. The flow guide apparatus further includes a line diffuser structure disposed between the lower flow guide structure and the upper flow guide structure. The line diffuser structure has a long axis along a length of the upper flow guide structure and a short axis. The line diffuser structure includes a plurality of through holes that are configured to approximately evenly distribute the at least one gas as it is output into a reactor.

Embodiments of the present disclosure provide a semiconductor processing apparatus and a dielectric window cleaning method of the semiconductor processing apparatus. The semiconductor apparatus includes a reaction chamber and a dielectric window arranged in the reaction chamber, an induction coil and a cleaning electrode, both located above the dielectric window, a radio frequency (RF) source assembly configured to apply RF power to the induction coil and the cleaning electrode, an impedance adjustment assembly electrically being connected to the cleaning electrode and being in an on-off connection to the output terminal of the RF source assembly, and the impedance adjustment assembly being configured to adjust the impedance between the output terminal of the RF source assembly and the cleaning electrode to cause the impedance to be greater than or smaller than the first predetermined value to disconnect or connect the impedance adjustment assembly and the output terminal of the RF source assembly. The semiconductor processing apparatus and the dielectric window cleaning method of the semiconductor processing apparatus of embodiments of the present disclosure can achieve a physical cleaning effect and a chemical cleaning effect at simultaneously on a basis of performing cleaning on the dielectric window. Thus, the cleaning efficiency of the dielectric window is effectively improved.

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

There is provided a decompression processing method for a substrate processing apparatus including a chamber for processing a substrate in an inside thereof, a decompression unit that decompresses the inside of the chamber, and a gas supply that supplies a gas into the inside of the chamber, the method including supplying an additional substance mixable with moisture in a liquid or solid state by the gas supply to the inside of the chamber, forming the moisture into a mixture of the additional substance, and decompressing the inside of the chamber by the decompression unit to remove as a gas the mixture from the inside of the chamber.

A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.

The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.

The plasma processing method according to the present disclosure is performed in a plasma processing apparatus. The plasma processing method comprises preparing a substrate including a silicon-containing film and a carbon-containing film formed on the silicon-containing film; setting a temperature of the substrate to a first temperature of 0° C. or less; supplying H.sub.2O to the substrate using a first processing gas containing comprising at least one of (a) gas comprising hydrogen atoms and oxygen atoms, and (b) a first gas comprising hydrogen atoms and a second gas comprising oxygen atoms; forming plasma from the first processing gas using a radio frequency and etching the carbon-containing film; setting the temperature of the substrate to a second temperature different from the first temperature; supplying a second processing gas containing a hydrogen- and fluorine-containing gas or both a hydrogen-containing gas and a fluorine-containing gas to the substrate; and forming plasma from the second processing gas using a radio frequency and etching the silicon-containing film.

A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.

A deposition apparatus, includes a chamber having at least one first gas inlet therein. A fixed chuck is installed in the chamber and an electrostatic chuck is installed on the fixed chuck. An edge ring is disposed on an edge of the electrostatic chuck. A shower head is disposed above the edge ring. A baffle is disposed above the shower head and an upper electrode is disposed above the baffle. A gas guide member is disposed above the upper electrode so that a flow path provided in the upper electrode and the first gas inlet are connected. The gas guide member has a flow path hole penetrating in upward and downward directions, and a plurality of guide holes are provided on an inner surface of the gas guide member.