An apparatus for forming a plasma may include one or more coupling ports to accept and RF current. The apparatus may additionally include a receptacle to accommodate one or more gases, in which the receptacle is oriented along a first axis. The apparatus may additionally include an RF coupling structure, oriented in a plane and substantially surrounding the receptacle, the RF coupling structure can be configured to conduct an RF current to bring about formation of the plasma within the receptacle. The apparatus may further include one or more linkages, coupled to the RF coupling structure, which may permit the plane of the RF coupling structure to pivot about a second axis so as to tilt the plane of the RF coupling structure toward the first axis.

There is provided a high dielectric film including amorphous hydrocarbon of which a dielectric constant is 10 or more. A leakage current of the high dielectric film is 1 A/cm.sup.2 or less, and an insulation level is 1 MV/cm or more. Rms surface roughness of the high dielectric film is 20 nm or less.

A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Epitaxial regions may be formed in specific locations on a semiconductor wafer with specific asymmetric properties such as slope or tilt direction, slope or tilt angle, and/or other asymmetric properties. The asymmetric epitaxial regions may be formed using various plasma-based fin structure etching techniques described herein. The specific asymmetric properties may increase metal landing coverage areas in particular locations on the semiconductor wafer (e.g., that are optimized for particular locations on the semiconductor substrate) to reduce the contact resistance between the epitaxial regions and associated conductive structures that are formed to the epitaxial regions. This increases semiconductor device performance, decreases the rate and/or likelihood of defect formation, and/or increases semiconductor device yield, among other examples.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

A RF power generator has a RF power source configured to generate an output signal. A power splitter is configured to receive the output signal and generate a plurality of split signals. A demagnetizing circuit is configured to receive the plurality of split signals. The demagnetizing circuit is configured to include a plurality of inductances corresponding to the plurality of split signals. The plurality of inductances is configured to reduce the effects of mutual impedance of an ICP chamber in series with the plurality of inductances so that a ratio between a pair of the plurality of split signals varies substantially linearly as one of the pair of the plurality of split signals is varied.

Embodiments of a plug for use in an electrostatic chuck are provided herein. In some embodiments, a plug for use in an electrostatic chuck includes a polymer sleeve having a central opening; and a core disposed in the central opening of the polymer sleeve, the core having a central protrusion and a peripheral ledge, wherein an outer surface of the core includes a helical channel extending from a lower surface of the core towards the peripheral ledge to at least partially define a gas flow path through the plug, and wherein the peripheral ledge is disposed between an upper surface of the polymer sleeve and the lower surface of the core.