There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

A radio frequency filter is provided and includes a dielectric layer and a first inductor. The first inductor includes an input, a first coil disposed on a first side of the dielectric layer and connected to the input, and a second coil disposed on a second side of the dielectric layer opposite the first side. The first and second coils are planar, such that windings of the first coil are in a first layer and windings of the second coil are in a second layer. The first coil overlaps and is connected in series with the second coil. The first coil, the dielectric layer and the second coil collectively provide a capacitance of the radio frequency filter. The first inductor further includes a first via extending through the dielectric layer and connected to the first coil and the second coil and a first output connected to the second coil.

A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an output electrically coupled with the transformer producing a waveform. In some embodiments, the waveform includes a plurality of high voltage pulses having a pulse amplitude greater than about 2 kV, a pulse width, and a pulse repetition frequency; and a sinusoidal waveform having a waveform frequency and a waveform amplitude greater than 100 V.

This disclosure describes systems, methods, and apparatus for generating a multi-level pulsed waveform using a DC section and a power amplifier. To improve DC section efficiency, a master state is used to determine when the rail voltage can be lowered, and to only allow a state assigned as the master state to lower the rail voltage. Selection of the master state is based on (1) any state having to raise the rail voltage to meet a power demand or (2) a state having the highest drive voltage as determined at the end of each pulse cycle. Further, to avoid challenges from integrator controller, drive voltage is carried over from a last state of one pulse cycle to a first state of a next pulse cycle and assignment of master state in the first state of each pulse cycle is not important and can be arbitrarily selected.

Various illustrative aspects are directed to a system. The system comprises a setpoint waveform streaming progenitor module, configured to receive inputs indicative of a desired setpoint waveform, and to output a data package based at least in part on the inputs indicative of the desired setpoint waveform, wherein the data package comprises a plurality of points, an interpolation method, and one or more interpolation parameters. The system further comprises a setpoint waveform streaming processing module, configured to receive the data package from the setpoint waveform streaming progenitor module, and to output a streaming setpoint waveform based at least in part on the data package.

Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Power supply devices for generating at least one electric high-frequency power signal for a plasma having at least a first plasma state and a second plasma state are provided. The power supply devices are configured to determine a first variable that characterizes a power reflected by the plasma in the first plasma state, determine a second variable that characterizes a power reflected by the plasma in the second plasma state, generate a third variable based on the first variable and the second variable, and control at least one of a frequency or a power of the high-frequency power signal based on the third variable.

Some embodiments include a high voltage pulsing power supply. A high voltage pulsing power supply may include: a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width greater than about 1 μs, and a pulse repetition frequency greater than about 20 kHz; a plasma chamber; and an electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce a pulsing an electric field within the chamber.