An RF generating device 2, which attenuates harmonics in RF power amplified by an RF amplifier and supplied to plasma generating electrodes, includes an RF generation unit 201 that generates a composite wave by combining a fundamental wave with a compensation wave which is made by inverting a phase of a harmonic generated by inputting the fundamental wave.

Provided is a filter device includes: a first coil group including a plurality of coils arranged along a central axis and spirally wound with a first inner diameter; and a second coil group including a plurality of coils arranged along the central axis and spirally wound with a second inner diameter larger than the first inner diameter. A pitch between respective turns of the plurality of coils of the second coil group is larger than a pitch between respective turns of the plurality of coils of the first coil group.

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an inlet port for introducing a liquid serving as a dielectric, has an outlet port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Systems and methods are provided herein for etch features on a substrate, while maintaining a near-unity critical dimension (CD) shrink ratio. The features etched may include, but are not limited to contacts, vias, etc. More specifically, the techniques described herein use a pulsed plasma to control the polymer build-up ratio between the major CD and minor CD of the feature, and thus, control the CD shrink ratio when etching features having substantially different major and minor dimensions. The CD shrink ratio is controlled by selecting or adjusting one or more operational parameters (e.g., duty cycle, RF power, etch chemistry, etc.) of the plasma etch process(es) to control the amount of polymer build-up at the major and minor dimensions of the feature.

A generator produces output such as delivered power, voltage, current, forward power etc. that follows a prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling sections of the pattern based on measurements taken one or more repetition periods in the past. A variable impedance match network may control the impedance presented to a radio frequency generator while the generator produces the output that follows the prescribed pattern of output versus time where the pattern repeats with a repetition period by controlling variable impedance elements in the match during sections of the pattern based on measurements taken one or more repetition periods in the past.

This application relates to a semiconductor device for a condition-controlled radio frequency (RF) system. In an embodiment of this application, an RF detection apparatus includes: a high-pass filter (HPF), one end of which is electrically coupled to an RF loop electrode of a ceramic heater, and another end of which is grounded; a voltage measurer, connected to the HPF in parallel; and a low-pass circuit, connected to the HPF in parallel.