An ECR (Electron Cyclotron Resonance) ion source includes a plasma chamber having a circular cylindrical cross-section, magnets for generating a magnetic field for confinement of the plasma in the plasma chamber, and a microwave generator disposed outside the plasma chamber and generating at least two microwave signals. Several antennas protrude radially into the plasma chamber with a predetermined angular offset α. The antennas receive phase-shifted microwave signals from the microwave generator and radiate linearly polarized microwaves, which in turn produce a circularly polarized microwave inside the plasma chamber. A method for operating an ECR ion source is also described.

In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

A microwave coupling/combining device for coupling and combining at least two microwave sources includes a waveguide provided with a sleeve extending longitudinally along a main axis and having two opposing ends having a first end provided with an element forming a short-circuit and a second open end. The device further includes at least one transverse bar extending inside the sleeve along a transverse axis orthogonal to the main axis; and at least two coaxial connectors provided for being connected respectively to microwave sources. Each coaxial connector is mounted externally on the sleeve and has a central conductive core connected to and extended by a conductive antenna extending in a direction orthogonal to the transverse axis and to the main axis inside the sleeve and ending by an end attached to a transverse bar.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

A microwave energy source that generates a microwave energy is disclosed. The microwave energy source has an on-state and an off-state. A control circuit is coupled to the microwave energy source and includes an output to generate a control signal that adjusts a pulse frequency of the microwave energy. A voltage generator applies a non-zero voltage to the microwave energy source during the off-state. A frequency and a duty cycle of the non-zero voltage is based on a frequency and a duty cycle of the control signal. A waveguide is coupled to the microwave energy source. The waveguide has a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma, a process inlet that injects a raw material into the reaction zone, and an outlet that outputs a powder based on a mixture of the supply gas and the raw material within the plasma.

A microwave output device includes a microwave generator configured to generate a pulse-modulated microwave; an output unit; a first directional coupler configured to output a part of a progressive wave; and a measurement device configured to determine measurement values of High and Low levels of a power of the progressive wave. The microwave generator alternately generates a first microwave having a bandwidth and a second microwave having a single frequency peak in synchronization with switching of the High level and the Low level; averages the measurement value corresponding to the first microwave with a moving average time equal to or larger than a reciprocal of a carrier pitch; averages the measurement value corresponding to the second microwave with a moving average time less than the reciprocal of the carrier pitch; and controls the powers of High and Low levels based on the averaged measurement values and set powers.

A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF.sub.3 gas.

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.